physica status solidi (a): Vol 203, No 7

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In 2022, the youngest family member physica status solidi (RRL) – Rapid Research Letters is turning 15 years. To celebrate this milestone, we present a new virtual collection with invited articles.

As we celebrate the 60^th anniversary year of the physica status solidi family, click here to access our continuously updated collection of invited articles written by authors and partners of the pss journals.

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physica status solidi (a): Volume 203, Issue 7

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Optimization of AlGaN/GaN HEMTs for high frequency operation

Original Papers

FMR investigations of half-metallic ferromagnets

Influence of substrate treatment on the growth morphology and magnetic anisotropy of epitaxial CrO2 films

Extra high frequency study of magnetic order in GMI nanostructures

Ferromagnetic resonance study of iron implanted PET foils

EPR study of paramagnetic Fe3+ centers in iron-implanted TiO2 rutile

FMR studies of bilayer Co90Fe10/Ni81Fe19, Ni81Fe19/Co90Fe10 and monolayer Ni81Fe19 thin films

Magnetoresistive effect and impedance spectroscopy of Co-implanted polyimide

Gd3+ and Eu2+ local environment in Ca1–x Eux B6 (0.0001 ≤ x ≤ 0.30) and Ca1–x Gdx B6 (0.0001 ≤ x ≤ 0.01)

Permanent magnet systems with strong stray magnetic fields and very high gradients for material separation

Magnetic study of Hitperm alloys (Fe0.5Co0.5)1–x –y –z Mx By Cuz (M = Hf, Zr, Nb)

Anisotropic FMR-linewidth of triple-domain Fe layers on hexagonal GaN(0001)

FMR study of ultrahigh vacuum e-beam evaporated Co23Cu77 nanogranular films: Magnetotransport properties

EPR study of the structural phase transitions in Fe3+ doped TlInS2

Bulk and surface spin excitations in thin films of manganites

Surface effects on magnetic properties of superparamagnetic magnetite nanoparticles

Growth

Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy

Progress in MOVPE growth of crack-free AlGaN based Bragg reflectors on Si(111)

InN growth on sapphire using different nitridation procedures

Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing

MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations

New method for the in situ determination of Alx Ga1–x N composition in MOVPE by real-time optical reflectance

Electrical characterization of Si-ion implanted Alx Ga1–x N annealed at lower temperatures

Crystallization of GaN by HVPE on pressure grown seeds

N-type doping of HVPE-grown GaN using dichlorosilane

Characterization of free standing GaN grown by HVPE on a LiAlO2 substrate

Development of native, single crystal AlN substrates for device applications

Strain in a -plane GaN layers grown on r -plane sapphire substrates

Morphology and microstructure of a -plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG)

Electron concentration and mobility profiles in InN layers grown by MBE

Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to films

High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE

Non-catalyst growth and characterization of a -plane AlGaN nanorods

Fabrication of GaN dot structures on Si substrates by droplet epitaxy

In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray-diffraction

Crystal quality and growth evolution of aluminum nitride on silicon carbide

Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

Analysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth by computational simulation

LPE growth of AlN from Cu–Al–Ti solution under nitrogen atmosphere

Structural properties

Structural analysis of (Ga,Mn)N epilayers and self-organized dots using MeV ion channeling

Misfit dislocations in In-rich InGaN/GaN quantum well structures

X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN

Investigation of buffer structures for the growth of a high quality AlGaN/GaN hetero-structure with a high power operation FET on Si substrate using MOCVD

Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

Optical properties

Crack free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities

Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE

Photonic devices

AlGaN multiple quantum well based deep UV LEDs and their applications

Novel devices based on the combination of nitride and II–VI materials

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm

Waveguide mode dynamics of blue laser diodes

Development of AlInGaN based blue–violet lasers on GaN and SiC substrates

Comparison of degradation mechanisms of blue-violet laser diodes grown on SiC and GaN substrates

Mg doping profile in III–N light emitting diodes in close proximity to the active region

Time resolved charge profiling of polarization dipoles in high power 525 nm green GaInN/GaN light emitting structures

Profiling of light emission of GaN-based laser diodes with cathodoluminescence

Deep ultraviolet light-emitting diodes

A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

Over 1000 mW single mode operation of planar inner stripe blue-violet laser diodes

Electronic devices

Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications

Deep-UV LED controlled AlGaN-based SAW oscillator

Nanocrystalline AlN:Si field emission arrays for vacuum electronics

Optimization of AlGaN/GaN HEMTs for high frequency operation

Influence of substrate treatment on the growth morphology and magnetic anisotropy of epitaxial CrO₂ films

EPR study of paramagnetic Fe³⁺ centers in iron-implanted TiO₂ rutile

FMR studies of bilayer Co₉₀Fe₁₀/Ni₈₁Fe₁₉, Ni₈₁Fe₁₉/Co₉₀Fe₁₀ and monolayer Ni₈₁Fe₁₉ thin films

Gd³⁺ and Eu²⁺ local environment in Ca_1–xEu_xB₆ (0.0001 ≤ x ≤ 0.30) and Ca_1–xGd_xB₆ (0.0001 ≤ x ≤ 0.01)

Magnetic study of Hitperm alloys (Fe_0.5Co_0.5)_{1–x –y –z}M_xB_yCu_z (M = Hf, Zr, Nb)

FMR study of ultrahigh vacuum e-beam evaporated Co₂₃Cu₇₇ nanogranular films: Magnetotransport properties

EPR study of the structural phase transitions in Fe³⁺ doped TlInS₂

Strain-relaxation in NH₃-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

New method for the in situ determination of Al_xGa_1–xN composition in MOVPE by real-time optical reflectance

Electrical characterization of Si-ion implanted Al_xGa_1–xN annealed at lower temperatures

Characterization of free standing GaN grown by HVPE on a LiAlO₂ substrate

Analysis of TMGa/NH₃/H₂ reaction system in GaN-MOVPE growth by computational simulation

High f _T and f _max AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

RF and DC characteristics in Al₂O₃/Si₃N₄ insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure