Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
M. Imura
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorG. Narita
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorT. Kitano
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorY. Hirose
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorN. Fujimoto
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorN. Okada
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorT. Kawashima
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorK. Iida
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorK. Balakrishnan
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorM. Tsuda
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Single Crystal Division, Kyocera Corporation, 1166-6 Nagatanino, Hebimizo-cho, Higashiohmi, Shiga 527-8555, Japan
Search for more papers by this authorM. Iwaya
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorS. Kamiyama
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorH. Amano
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorI. Akasaki
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorM. Imura
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorG. Narita
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorT. Kitano
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorY. Hirose
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorN. Fujimoto
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorN. Okada
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorT. Kawashima
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorK. Iida
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorK. Balakrishnan
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorM. Tsuda
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Single Crystal Division, Kyocera Corporation, 1166-6 Nagatanino, Hebimizo-cho, Higashiohmi, Shiga 527-8555, Japan
Search for more papers by this authorM. Iwaya
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorS. Kamiyama
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorH. Amano
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorI. Akasaki
Faculty of Science and Technology, 21st century COE “Nano-Factory”, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Search for more papers by this authorAbstract
Epitaxial lateral overgrowth (ELO) of low-dislocation-density AlN layers on trench-patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, 〈10
0〉 and 〈11
0〉, were used. We can obtain fully coalesced AlN only on the sapphire substrate having 〈11
0〉 trenches. The dislocation density of ELO-AlN is as low as 6.7 × 108 cm–2. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
References
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