physica status solidi (a)
Volume 203, Issue 7 pp. 1618-1621
Original Paper

Progress in MOVPE growth of crack-free AlGaN based Bragg reflectors on Si(111)

M. B. Charles, 

M. B. Charles

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Y. Zhang, 

Y. Zhang

Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, U.K.

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M. J. Kappers, 

M. J. Kappers

Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, U.K.

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C. J. Humphreys, 

C. J. Humphreys

Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, U.K.

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First published: 18 May 2006
https://doi.org/10.1002/pssa.200565348
Citations: 1

Abstract

Having previously reported growth of uncracked AlN/GaN distributed Bragg reflectors (DBRs), this paper reports use of superlattices as a replacement for AlN layers to produce high quality crack free DBRs. In addition an InGaN LED structure grown above the DBR has been studied and showed improved uniformity in comparison with a standard LED structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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