Volume 203, Issue 7 pp. 1749-1753
Original Paper

Crack free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities

Henning Lohmeyer

Corresponding Author

Henning Lohmeyer

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Phone: +49 421 218 4428, Fax: +49 421 218 7318Search for more papers by this author
Kathrin Sebald

Kathrin Sebald

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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Carsten Kruse

Carsten Kruse

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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Roland Kröger

Roland Kröger

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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Jürgen Gutowski

Jürgen Gutowski

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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Detlef Hommel

Detlef Hommel

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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Jan Wiersig

Jan Wiersig

Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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Frank Jahnke

Frank Jahnke

Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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First published: 18 May 2006
Citations: 2

Abstract

We report on the successful fabrication and optical investigation of monolithicly grown GaN based vertical-cavity surface-emitting laser structures featuring quality factors of 250. Short-period AlN/InGaN superlattices are used for the low-index layers of the distributed Bragg reflectors. Pillar microcavities are realized by focused-ion-beam etching. Micro-photoluminescence measurements reveal the longitudinal and transversal mode spectra of the cavities in good agreement with theoretical calculations based on a vectorial transfer matrix method. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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