Original Paper
Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
Abstract
In this work we present a reliability study of low dislocation density InGaN laser diodes fabricated on high-pressure grown GaN monocrystaline substrates. The aging process was performed under pulse current conditions. Degradation of these devices manifests primarily in the increase of the threshold current. Interestingly, the differential efficiency of lasers remains stable at all times. The aging time dependence of the increase of the threshold current precisely follows a square root dependence. These observations suggest that the degradation results from the enhancement of the nonradiative recombination within the device active layers and is related to point defect diffusion. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
