Volume 203, Issue 7 pp. 1672-1675

Original Paper

Strain in a -plane GaN layers grown on r -plane sapphire substrates

C. Roder,

Corresponding Author

C. Roder

[email protected]

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Phone: +49 421 218 3380, Fax: +49 421 218 4581Search for more papers by this author

S. Einfeldt,

S. Einfeldt

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Present address: Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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S. Figge,

S. Figge

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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D. Hommel,

D. Hommel

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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T. Paskova,

T. Paskova

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

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B. Monemar,

B. Monemar

Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

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B. A. Haskell,

B. A. Haskell

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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P. T. Fini,

P. T. Fini

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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J. S. Speck,

J. S. Speck

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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S. Nakamura,

S. Nakamura

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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C. Roder,

Corresponding Author

C. Roder

[email protected]

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Phone: +49 421 218 3380, Fax: +49 421 218 4581Search for more papers by this author

S. Einfeldt,

S. Einfeldt

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Present address: Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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S. Figge,

S. Figge

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Search for more papers by this author

D. Hommel,

D. Hommel

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

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T. Paskova,

T. Paskova

Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

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B. Monemar,

B. Monemar

Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

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B. A. Haskell,

B. A. Haskell

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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P. T. Fini,

P. T. Fini

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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J. S. Speck,

J. S. Speck

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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S. Nakamura,

S. Nakamura

Materials Department, University of California, Santa Barbara, CA 93106-5050, USA and NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, USA

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First published: 18 May 2006

https://doi.org/10.1002/pssa.200565447

Citations: 4

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Abstract

The strain in a -plane GaN layers of different thickness grown on r -plane sapphire substrates by hydride vapor phase epitaxy was studied by X-ray diffraction. The layers are found to be under compression in the growth plane and under tension in the growth direction. Therefore, the symmetry of the GaN unit cell is no longer hexagonal but orthorhombic. With increasing layer thickness the strain relaxes and the curvature of the wafer increases. Wafer bending is proposed to be the major strain relaxation mechanism. The anisotropic in-plane strain relaxation is attributed to the elastic and thermal anisotropy of GaN and sapphire. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Volume203, Issue7

May 2006

Pages 1672-1675

Strain in a -plane GaN layers grown on r -plane sapphire substrates

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Strain in a -plane GaN layers grown on r -plane sapphire substrates

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