Original Paper
New method for the in situ determination of AlxGa1–xN composition in MOVPE by real-time optical reflectance
Abstract
This paper reports on the in situ determination of the Al-content in Alx Ga1–x N layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the dependence of the refractive index and the extinction coefficient on Al-content is compared to that of the new dispersion approach. The limits and possibilities of the new approach will be discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
