Crystal quality and growth evolution of aluminum nitride on silicon carbide

High quality base layer aluminum nitride films have become increasingly desirable with the advent of deep ultraviolet (<280 nm) emitters for water purification, solid state lighting, and biochemical detection applications. In this study, the influence of the MOCVD growth conditions on the structural properties of aluminum nitride grown on silicon carbide, both as-delivered and chemomechanically polished, was studied. Pre-deposition nitridation of the SiC substrate, growth temperature, growth rate, ammonia flow (V/III ratio), and gallium surfactants were explored. Films were analyzed with transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray diffraction. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)