Thin films of chalcogenide vitreous semiconductors are characterized by a much higher resolving power than that of conventional optical focusing systems. The key interest is focused on the formation of elements with sizes significantly less than the values determined by the light diffraction limit. This process can be realized by using the nonlinear exposure characteristics of chalcogenide glass semiconductor films and a modification of their structure for the localization of exposing light to dimensions below the diffraction-limited area.

The ambient environment differently affects the AC spectra of conductivity of chalcogenide glassy semiconductors (ChGS): addition of both NO₂ and water vapor strongly influences the shape of the conductivity spectrum, while the addition of CO₂ practically does not affect it. Thus, the surface phenomena of ChGS caused by gas adsorption can lead to a modification of the charge transport mechanism. Apparently, this phenomenon is typical for disordered semiconductors and is due to both disturbing of the distribution of energetic states and variation of the mobility of free carriers in the region adjacent to surface.

Structural and compositional changes of Ge₄₀Se₆₀/Ag bilayer films resulting after proton irradiation are studied here. Silver surface deposition occurs and masks the structure of the chalcogenide film.

Annealing at 350 °C of the GeTe\SnSe double stacked film produces Sn migration from the SnSe layer into the vacancies of the GeTe crystalline layer and the evaporation of an important quantity of Se, both leading to the emergence of a new, unique, unindexed face-centered cubic Ge_0.75Sn_0.25Te phase.

Since the inception of glass science, one has wondered whether the viscous slowdown of a melt could encode the nature of the resulting glass. Here, based on the characterization of homogeneous binary Ge–Se and Ge–S glasses and atomistic simulations, it is revealed that the dynamics of a melt unequivocally encodes the topological nature of the corresponding glass.

This article contains original results of calculations in the coherent potential approximation concerning the trends in the electronic spectrum and spin magnetic moments of iron in ionically compensated solid solutions La_1−xSr_xFeO_3−δ (δ = x/2) with randomly distributed strontium acceptors and oxygen vacancies.

Kafi et al. carried out a systematic investigation of the interfacial properties of n-Cu₂O/aqueous electrolyte junction, n-Cu₂O/Au junction, and Cu₂O p–n homojunction on electrodeposition bath pH. The authors observe that not only the flat-band potential of n-Cu₂O/electrolyte junction but also the built-in potentials of n-Cu₂O/Au and n-Cu₂O/p-Cu₂O junctions can be controlled with bath pH of Cu₂O. Experimental evidence leads to the conclusion that bath pH modifies the relative band-edge position of electrodeposited n-Cu₂O films at the interfaces.

The authors have investigated the hysteresis behavior of the magnetodielectric effect for Mn–Zn ferrite with different Zn doping. Both magnetodielectric and magnetostriction curves show similar hysteresis behavior. The hysteresis behavior of the magnetodielectric effect is restricted by the magnitude of magnetoresistance ratios. It is demonstrated that the hysteresis behavior of the magnetodielectric effect results from the combination of magnetoresistance and magnetostriction effects.

The SEM and TEM images of FeNi@rGO show that FeNi nanocrystals with size of 10–100 nm are uniformly anchored on the reduced graphene oxide (rGO) without any agglomeration. Generally, a reflection loss (RL) exceeding −10 dB can be obtained in the frequency range from 3.60 GHz to 18.00 GHz, with thickness from 1.27 to 5.00 mm for the FeNi@rGO composite.

The influence of exchange field h in the barrier, temperature T, and misorientation of d-wave superconducting electrodes on zero bias conductance (ZBC) in d-wave superconductor/ferromagnet/d-wave superconductor (DFD) junctions is presented. In the small fields domain, the ZBC could be enhanced by increasing the exchange field (up to h ≈ Δ), while the temperature dependence of ZBC may show a kink at T = T* from which it is possible to determine the value of h, since h = Δ(T*).

This work introduces the magnetic relaxation properties of La_0.75Sr_1.25CoO₄. Not only below but also above the freezing temperature T_f, all magnetization measurements as a function of time display a cooperative relaxation. Above T_f, the ZFC (zero-field-cooled) relaxation follows the stretched exponential form while the FC (field-cooled) relaxation rate can be well described by a power law. These magnetic relaxation phenomena can be attributed to the local interactions between ferromagnetic clusters.

Three electron paramagnetic resonance (EPR) signals, due to the P_b0 defect at the Si/SiO₂ interface, silicon dangling bonds (SiDB), and carbon-related defect (CRD), respectively, were observed in carbonized porous silicon (por-Si:C). The oxidation of por-Si:C gives rise to the formation of carbon clusters and the decrease of CRD spin concentration thanks to the formation of COH carboxylic groups.

The thickness of SnO₂ film is meticulously controlled by manipulating the deposition time in aerosol-assisted chemical vapour deposition (AACVD) technique. Achieving the right thickness of the SnO₂ photoanode is very important in order to optimize the performance of photoelectrochemical cells.

Biaxial strains and high pressure have a crucial effect on tailoring the physical properties of defect chalcopyrites such as DC-HgAl₂Te₄ and DC-HgIn₂Te₄. Different external forces play different roles in adjusting the E_g values of the defect chalcopyrites in this work. Regulating the tensile biaxial strain can make an indirect-to-direct band gap transition.

BaTiO₃ nanoparticles, synthesized through hydrothermal method, were subjected to gamma radiation at room temperature with different dosages of 0, 50, 100, 150, 200, and 250 kGy. The properties of BaTiO₃ are investigated via X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and impedance analyzer to clarify the changes of the crystal phase, the structure, size, dielectric property and conductivity. It is evident that there will be increase in volume of the unit cell, particle size and electrical conductivity.

Apostolov et al. investigate LSMO nanoparticles with different Sr-dopant concentrations, sizes up to 30 nm and phase transition temperature T_C = 315 K. The numerical results for the dependence of T_C, saturation magnetization M_s and coercivity H_C on the nanoparticles sizes and the Sr doping concentration are explained on a microscopic level. The authors calculate the specific absorption rate (SAR) which characterizes the efficiency of the absorption energy when magnetic hyperthermia is applied as a therapeutic method for the treatment of tumors.

The charge-storage properties of PS/SFXs films are studied by the single and repeated-contact modes with atomic force microscopy probe. The results show that the contact duration and the number of contacts can improve the properties of the trapped charges in samples. The repeated-contact mode is promising for stability of trapped charges in PS/SFXs. The possible physical mechanisms are discussed.

The electronic and optical properties of C/Cr doped TiO₂ are compared via theoretical calculation by GGA + U method, based on density functional theory. The visible light absorption of anatase TiO₂ is effectively enhanced by C–Cr co-doping. The synergistic effect of C and Cr on the electronic structure is responsible for improvement of photocatalytic performance.

Anatase TiO₂ thin films are investigated by absorption spectroscopy and Raman scattering. Absorption spectroscopy shows that band gap energy increases with decreasing grain size. An absorption model is used to determine the grain size, size distribution, and allowed transition energies. Two direct transitions and four indirect ones are observed. Raman spectroscopy shows that the phonon frequency, accompanied with the indirect transition, is blueshifted as grain size decreases.

DFT calculations show that surface dangling bonds of Si atoms (p_b-centers) can passivate impurity B atoms in porous silicon at large distances up to 25 Å. In this case, around the positively charged p_b-center an area of increased potential appears and a Coulomb blockade (CB) of free holes arises. The NO₂ molecule adsorbed on the OH group near the p_b-center creates an acceptor level. After an electron capture by this level, СB is removed.

The structural, electronic, and mechanical properties, and dynamic stabilities of LiAu₃B and LiAg₃B ternary borides, and those of related Li_xAu₉B₃ (x = 0, 1, 2) sub-structures have been investigated. The calculations show that LiAu₃B is thermodynamically, mechanically, and dynamically stable at the ambient conditions. The effects of the Li-concentration on the physical properties of the structures are discussed.

The lanthanide sesquioxides (Ln₂O₃) are widely used in many applications such as catalysis, neutron absorbers in nuclear reactors, lasers, biomedical applications, optical displays, solid oxide fuel cells, etc. Density functional theory is used to study the structural and mechanical properties of the oxides. The knowledge about structural and mechanical properties of these oxides has significant impact on selecting suitable materials for novel applications.

Hydrostatic pressure and biaxial strains have a significant effect on the electronic and elastic properties of hexagonal β-Si₃N₄. Hardness and anisotropy enhancement as well as band gap tuning can be observed by using strain engineering. β-Si₃N₄ undergoes an indirect to direct band-gap transition at ϵ_xx =  5%, while β-Si₃N₄ is always an indirect band-gap semiconductor under pressure and compressive strains.

The pre-edge peak from dipole allowed 2p–6s transition is a sensitive finger-print of the Pb valence state in solid state materials. Such a pre-edge feature is observed in PbNiO₃, from which the valence of Pb is determined to be Pb⁴⁺ with two 6 s holes, and no such 2p–6s related excitation is observed in PbTiO₃, indicating the formation of Pb²⁺ with fully occupied 6s² state in this material.