Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD
Corresponding Author
Mohamad F. Mohamad Noh
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorMohd F. Soh
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorMuhammad A. Riza
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorJavad Safaei
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorSiti N. F. Mohd Nasir
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorNorfaizzatul W. Mohamad Sapian
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorChin H. Teh
ASASIpintar Program Pusat PERMATApintar Negara Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorMohd A. Ibrahim
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorNorasikin Ahmad Ludin
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorCorresponding Author
Mohd A. Mat Teridi
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorCorresponding Author
Mohamad F. Mohamad Noh
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorMohd F. Soh
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorMuhammad A. Riza
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorJavad Safaei
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorSiti N. F. Mohd Nasir
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorNorfaizzatul W. Mohamad Sapian
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorChin H. Teh
ASASIpintar Program Pusat PERMATApintar Negara Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorMohd A. Ibrahim
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorNorasikin Ahmad Ludin
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorCorresponding Author
Mohd A. Mat Teridi
Solar Energy Research Institute SERI Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Search for more papers by this authorAbstract
Tin (IV) oxide (SnO2) is a stable semiconductor and has been used in a wide range of applications. In this work, aerosol-assisted chemical vapor deposition (AACVD) technique is employed to deposit SnO2 thin film with different layer thicknesses by controlling the deposition time. The morphological and optical properties of SnO2 layer are investigated thoroughly to understand the relationship between the deposition time and SnO2 performance in photoelectrochemical cells. The bandgap energy of all SnO2 thin films is determined to be 3.65 eV. However, from linear sweep voltammetry (LSV) analysis, it is found that SnO2 layer deposited for 15 min, which produced a layer with thickness of about 50 nm, showed the best photocurrent performance (30.7 µA cm−2 at 1.0 V vs. Ag/AgCl) compared to their thinner or thicker counterparts. The right thickness enables the formation of a film with complete surface coverage, which effectively prevents current leakage and allows optimum light absorption. Besides, electrochemical impedance spectroscopy (EIS) analysis confirms that 50 nm thick SnO2 layer possesses fastest electron transfer property compared to thicker or thinner layers.
Conflict of Interest
The authors declare no conflict of interest.
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