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Electronic conductivity and structural distortion at the interface between insulators SrTiO3 and LaAlO3
- Page: 2145
- First Published: 10 July 2006
Prefaces
Original Papers
Interfaces and dislocations in compound semiconductors
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Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
- Pages: 2151-2155
- First Published: 10 July 2006
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Mixed partial dislocation core structure in GaN by high resolution electron microscopy
- Pages: 2156-2160
- First Published: 10 July 2006
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Analysis of partial dislocations in wurtzite GaN using gradient elasticity
- Pages: 2161-2166
- First Published: 10 July 2006
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Ab-initio tight-binding study of the core structures of the c -edge dislocation in wurtzite GaN
- Pages: 2167-2171
- First Published: 10 July 2006
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Behaviour of the AlN cap during GaN implantation of rare earths and annealing
- Pages: 2172-2175
- First Published: 10 July 2006
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Atomic structure and relative stability of gallium and nitrogen interstitials in GaN [0001] grain boundaries
- Pages: 2176-2180
- First Published: 10 July 2006
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Properties of the CdTe/InSb interface studied by optical and surface analytical techniques
- Pages: 2181-2185
- First Published: 10 July 2006
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Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy
- Pages: 2186-2189
- First Published: 10 July 2006
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Interfacial diffusion and precipitation in rf magnetron sputtered (Mn)ZnO layers
- Pages: 2190-2193
- First Published: 10 July 2006
Gate oxide interfaces
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Interface of atomic layer deposited Al2O3 on H-terminated silicon
- Pages: 2194-2199
- First Published: 10 July 2006
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Si-oxide/Si and Si-oxynitride/Si interfaces analysed by ultra-low energy SIMS
- Pages: 2200-2204
- First Published: 10 July 2006
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Intrinsic ferroelectric hysteresis behaviours for heterostructures
- Pages: 2205-2208
- First Published: 10 July 2006
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Electronic conductivity and structural distortion at the interface between insulators SrTiO3 and LaAlO3
- Pages: 2209-2214
- First Published: 10 July 2006
Original Papers
Interfaces and defects in electro-ceramics
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Electrical properties of nanocrystalline HfTiO4 gate insulator
- Pages: 2215-2218
- First Published: 10 July 2006
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Influence of surface and subsurface defects on the behavior of the rutile TiO2(110) surface
- Pages: 2219-2222
- First Published: 10 July 2006
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Effect of substituted IIIB transition metals on the energy gap of α-Al2O3 by first-principle calculations
- Pages: 2223-2228
- First Published: 10 July 2006
Metal–metal interfaces and interfacial modeling
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High resolution transmission electron microscopy study on the nano-scale twinning of θ-NiMn precipitates in an Fe–Ni–Mn maraging alloy
- Pages: 2229-2235
- First Published: 10 July 2006
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Laser assisted fabrication of Co on Ti–6Al–4V for bio-implant application
- Pages: 2236-2240
- First Published: 10 July 2006
Interfaces in nano-structured and amorphous thin-film systems
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Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near-surface region
- Pages: 2241-2246
- First Published: 10 July 2006
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Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
- Pages: 2247-2253
- First Published: 10 July 2006
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Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
- Pages: 2254-2259
- First Published: 10 July 2006
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Laser composite surfacing of stainless steel with SiC
- Pages: 2260-2265
- First Published: 10 July 2006
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Formation of aluminum silicate film on steel in granite–copper–dry steam reaction system
- Pages: 2266-2273
- First Published: 10 July 2006
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Deposition of thallium sulfide layers on polyethylene and nanostructured silica by a sulfurisation-reaction process
- Pages: 2274-2280
- First Published: 10 July 2006
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Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces
- Pages: 2281-2286
- First Published: 10 July 2006
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Modification/oxidation of GaAs surface in electrolytes for cell-culture bio-sensing devices
- Pages: 2287-2293
- First Published: 10 July 2006
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In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces
- Pages: 2294-2297
- First Published: 10 July 2006