An influence of the surface stoichiometric defects on the electronic and electrical properties of SnO₂ layers has been studied by means of computer simulation. The surface potential and in-depth potential profiles in the accumulation region have been rigorously computed at various temperatures (from 400 to 900 K). The behaviour of both the surface and bulk Fermi level position versus temperature has been analysed. Furthermore, in-depth profiles of carrier concentration and the surface potential as well as the SnO₂ layer conductance for different surface donor density of state have been calculated. It has been found that the surface reduction and bulk donor concentration (in the range from 3 × 10¹⁴ to 3 × 10¹⁸ cm^–3) are strongly correlated with the development of near-surface accumulation region and thus modification of the layer electrical parameters. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Volume203, Issue9

July 2006

Pages 2241-2246

Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO₂ surface and near-surface region

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Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near-surface region

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Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO₂ surface and near-surface region