Volume 203, Issue 9 pp. 2151-2155

Original Paper

Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE

G. P. Dimitrakopulos,

Corresponding Author

G. P. Dimitrakopulos

[email protected]

Aristotle University of Thessaloniki, Department of Physics, Solid State Section, 541 24 Thessaloniki, Greece

Phone: +30 2310 998562, Fax: +30 2310 998589Search for more papers by this author

J. Kioseoglou,

J. Kioseoglou

Aristotle University of Thessaloniki, Department of Physics, Solid State Section, 541 24 Thessaloniki, Greece

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E. Dimakis,

E. Dimakis

Microelectronics Research Group, Department of Physics, University of Crete, Heraklion-Crete, Greece; and IESL, FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece

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A. Georgakilas,

A. Georgakilas

Microelectronics Research Group, Department of Physics, University of Crete, Heraklion-Crete, Greece; and IESL, FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece

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G. Nouet,

G. Nouet

SIFCOM, UMR CNRS 6176, ENSICAEN, 6, Boulevard du Maréchal Juin, 14050 Caen Cedex, France

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Ph. Komninou,

Ph. Komninou

Aristotle University of Thessaloniki, Department of Physics, Solid State Section, 541 24 Thessaloniki, Greece

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G. P. Dimitrakopulos,

Corresponding Author

G. P. Dimitrakopulos

[email protected]

Aristotle University of Thessaloniki, Department of Physics, Solid State Section, 541 24 Thessaloniki, Greece

Phone: +30 2310 998562, Fax: +30 2310 998589Search for more papers by this author

J. Kioseoglou,

J. Kioseoglou

Aristotle University of Thessaloniki, Department of Physics, Solid State Section, 541 24 Thessaloniki, Greece

Search for more papers by this author

E. Dimakis,

E. Dimakis

Microelectronics Research Group, Department of Physics, University of Crete, Heraklion-Crete, Greece; and IESL, FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece

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A. Georgakilas,

A. Georgakilas

Microelectronics Research Group, Department of Physics, University of Crete, Heraklion-Crete, Greece; and IESL, FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece

Search for more papers by this author

G. Nouet,

G. Nouet

SIFCOM, UMR CNRS 6176, ENSICAEN, 6, Boulevard du Maréchal Juin, 14050 Caen Cedex, France

Search for more papers by this author

Ph. Komninou,

Ph. Komninou

Aristotle University of Thessaloniki, Department of Physics, Solid State Section, 541 24 Thessaloniki, Greece

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First published: 10 July 2006

https://doi.org/10.1002/pssa.200566010

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Abstract

Quaternary In_0.085Al_0.285Ga_0.63N/GaN multiple quantum wells (MQW) grown by plasma-assisted molecular beam epitaxy are characterized by high resolution transmission electron microscopy (HRTEM), geometric phase analysis, and energy dispersive X-ray (EDX) nano-analysis. The MQW exhibit sharp well-defined InAlGaN/GaN interfaces while the GaN/InAlGaN interfaces are more smeared. The InAlGaN quantum wells and the GaN barriers are lattice-matched. Chemical distribution profiles are extracted from EDX line scans, obtained with a nanoprobe, which are compared to convoluted theoretical profiles, and are in good agreement with the HRTEM observations. Indium clustering occurs after prolonged observation under the electron beam. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Volume203, Issue9

July 2006

Pages 2151-2155

Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE

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Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE

Abstract

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