Original Paper

Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

Corresponding Author

A. Lakdja

[email protected]

Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria

Phone: +213 (0)48 54 11 52, Fax: +213 (0)48 54 11 52Search for more papers by this author

B. Bouhafs,

B. Bouhafs

Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria

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P. Ruterana,

P. Ruterana

SIFCOM UMR 6176, CNRS-ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France

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A. Lakdja,

Corresponding Author

A. Lakdja

[email protected]

Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria

Phone: +213 (0)48 54 11 52, Fax: +213 (0)48 54 11 52Search for more papers by this author

B. Bouhafs,

B. Bouhafs

Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria

Search for more papers by this author

P. Ruterana,

P. Ruterana

SIFCOM UMR 6176, CNRS-ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France

Search for more papers by this author

First published: 10 July 2006

https://doi.org/10.1002/pssa.200566036

Citations: 1

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Abstract

The electronic structures of a monolayer quantum well (MLQW) in GaN are investigated by means of the first-principles full potential linearized augmented plane waves method within the local density approximation (LDA). A super-cell with periodic boundaries is used to study such systems. It is shown that one InN(AlN) MLQW in the GaN host modifies the localization of charge in the valence band maximum (VBM) and the conduction band minimum (CBM) of In(Al)N/GaN systems. On the other hand the change of the band gap depends on the depth of the MLQW in the GaN matrix. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Volume203, Issue9

July 2006

Pages 2247-2253

Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

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Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

Abstract

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