Oxygen-related defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to one or 4-steps pre-annealing at 720–1000 K under 10⁵ Pa and next treated at 1170–1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence (PL) and microhardness measurements as well as by spectroscopic reflectrometry. Microstructure of HT-HP treated Cz-Si is dependent on nucleation centres for oxygen precipitation created by pre-annealing and on applied pressure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Volume203, Issue9

July 2006

Pages 2254-2259

Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

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Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

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