Interfacial diffusion and precipitation in rf magnetron sputtered (Mn)ZnO layers
Abstract
This report presents TEM results obtained on ZnO layers doped with 10% Mn, deposited at 550 °C and subsequently annealed at 800 °C in air. Mn rich precipitates form inside the doped areas and a Mn containing interface phase appears at the ZnO/sapphire interface, following Mn diffusion and reaction. The interface phase is polycrystalline, some patches have been identified as trimetallic (ZnAlMn)O of cubic structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)