Original Paper

Properties of the CdTe/InSb interface studied by optical and surface analytical techniques

Corresponding Author

Z. C. Feng

[email protected]

Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC

Phone: +886 2 3366 3543, Fax: +886 2 2367 7467Search for more papers by this author

S. Y. Hung,

S. Y. Hung

Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC

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A. T. S. Wee,

A. T. S. Wee

Department of Physics, National University of Singapore, Singapore 119260

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Z. C. Feng,

Corresponding Author

Z. C. Feng

[email protected]

Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC

Phone: +886 2 3366 3543, Fax: +886 2 2367 7467Search for more papers by this author

S. Y. Hung,

S. Y. Hung

Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC

Search for more papers by this author

A. T. S. Wee,

A. T. S. Wee

Department of Physics, National University of Singapore, Singapore 119260

Search for more papers by this author

First published: 10 July 2006

https://doi.org/10.1002/pssa.200566013

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Abstract

Indium interdiffusion in MBE-grown CdTe/InSb heterostructures was studied by optical and surface techniques of photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). A correlation between the two types of investigations is established. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

References

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Volume203, Issue9

July 2006

Pages 2181-2185

Properties of the CdTe/InSb interface studied by optical and surface analytical techniques

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Properties of the CdTe/InSb interface studied by optical and surface analytical techniques

Abstract

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