• Issue

    physica status solidi (c): Volume 0, Issue 2

    585-802
    February 2003
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Proceedings of the 10th International Conference on Shallow-Level Centers in Semiconductors (SLCS-10)

Marek Godlewski, 
  • Page: 585
  • First Published: 24 November 2003

Preface: phys. stat. sol. (c) 0/2

R. Stępniewski,  A. Witowski,  R. Buczko,  M. Godlewski, 
  • Pages: 593-594
  • First Published: 05 February 2003

Paramagnetic defects in neutron irradiated bulk GaN crystals

J. H. Kim,  I.-W. Park,  S. H. Choh,  S. S. Park,  B. G. Kim,  Y. H. Kang, 
  • Pages: 597-600
  • First Published: 27 January 2003

Shallow donor centers in gallium nitrides

V. V. Emtsev,  V. Yu. Davydov,  K. V. Emtsev,  D. S. Poloskin,  G. A. Oganesyan,  V. V. Kozlovskii,  E. E. Haller, 
  • Pages: 601-604
  • First Published: 27 January 2003

Mixing of impurity levels by a built-in electric field in a CdMgTe/CdZnTe heterostructure

J. Łusakowski,  G. Cywiński,  K. Korona,  W. Knap,  J. Kossut, 
  • Pages: 605-608
  • First Published: 27 January 2003

FIR photon energy independent intra-impurity transitions in uniformly iodine-doped CdTe/Cd1–xMgxTe quantum well

M. Szot,  K. Karpierz,  J. Kossut,  M. Grynberg, 
  • Pages: 609-612
  • First Published: 27 January 2003

Anti-Stokes luminescence in ternary Zn1–xMgxSe compounds at liquid helium temperature

A. A. Belov,  F. Firszt,  V. S. Gorelik,  A. L. Karuzskii,  E. I. Mahov,  H. Męczyńska,  A. V. Perestoronin,  P. P. Sverbil,  J. Szatkowski, 
  • Pages: 613-617
  • First Published: 27 January 2003

High temperature electrical conductivity in donor-doped II–VI compounds

K. Lott,  O. Volobujeva,  A. Öpik,  T. Nirk,  L. Türn,  M. Nõges, 
  • Pages: 618-621
  • First Published: 27 January 2003

Investigation of excess Zn in ZnO

K. Lott,  O. Volobujeva,  M. Raukas,  L. Türn,  A. Grebennik,  A. Vishnjakov, 
  • Pages: 622-625
  • First Published: 27 January 2003

Electrical and optical characterization of n-type ZnO thin films

K. Yoshino,  T. Hata,  T. Kakeno,  H. Komaki,  M. Yoneta,  Y. Akaki,  T. Ikari, 
  • Pages: 626-630
  • First Published: 27 January 2003

Impurity levels of high quality p-doped ZnTe single crystal

Kenji Yoshino,  Minoru Yoneta,  Atsutoshi Arakawa,  Kenzo Ohmori,  Hiroshi Saito,  Masakazu Ohisihi, 
  • Pages: 631-634
  • First Published: 27 January 2003

Chemical etching-induced defects in n-type ZnSe crystal grown by physical vapor transport

M. Yoneta,  H. Kato,  K. Yoshino,  M. Ohishi,  H. Saito,  K. Ohmori, 
  • Pages: 635-639
  • First Published: 27 January 2003

Anomalous PL brightening caused by impact formation of a (D+, X) complex during an impact ionization avalanche in n-GaAs

Kazunori Aoki, 
  • Pages: 640-643
  • First Published: 27 January 2003

MOCVD n-InAs thin layers compared with MBE samples – far infrared magnetophotoconductivity

Z. Romanowski,  M. Szot,  K. Karpierz,  R. Bożek,  R. Stępniewski,  M. Grynberg, 
  • Pages: 644-647
  • First Published: 27 January 2003

Effects of hydrostatic stress on the density of impurity states and donor-related optical absorption spectra in GaAs–(Ga,Al)As quantum wells

S. Y. López,  N. Porras-Montenegro,  C. A. Duque, 
  • Pages: 648-651
  • First Published: 27 January 2003

Donor-related density of states and polarizability in a GaAs-(Ga, Al)As quantum-well under hydrostatic pressure and applied electric field

A. L. Morales,  A. Montes,  S. Y. López,  N. Raigoza,  C. A. Duque, 
  • Pages: 652-656
  • First Published: 27 January 2003

Recombination of excitons bound on donor–acceptor impurity pairs in δ-doped type II GaAs/AlAs superlattices

D. V. Gulyaev,  A. M. Gilinsky,  A. I. Toropov,  A. K. Bakarov,  K. S. Zhuravlev, 
  • Pages: 657-660
  • First Published: 27 January 2003

Localized and resonant shallow donor states in GaAs/InGaAs double-quantum-well heterostructures

N. A. Bekin,  L. V. Krasilnikova,  S. G. Pavlov,  V. N. Shastin, 
  • Pages: 661-664
  • First Published: 27 January 2003

Study of acceptor centers in GaAs after high temperature annealing. Experiments and calculation

A. Nouiri,  Y. Sayad,  A. Djemel, 
  • Pages: 665-668
  • First Published: 27 January 2003

Optically detected magnetic resonance of shallow donors in GaAs observed in photoluminescence kinetics

A. E. Nickolaenko,  A. M. Gilinsky,  O. A. Shegai,  T. S. Shamirzaev,  K. S. Zhuravlev, 
  • Pages: 669-672
  • First Published: 27 January 2003

Extended theory for local-phonon-coupled low-energy anharmonic excitation of oxygen in silicon: Calculation of line intensity ratio

H. Yamada-Kaneta, 
  • Pages: 673-679
  • First Published: 27 January 2003

On the impurity photoconductivity of uniaxially stressed p-Ge

V. Ya. Aleshkin,  A. V. Gavrilenko,  V. I. Gavrilenko,  D. V. Kozlov,  A. T. Dalakjan,  V. N. Tulupenko, 
  • Pages: 680-682
  • First Published: 27 January 2003

Coulomb related Landau spectra of axial and double acceptors in germanium

P. Fisher,  R.E.M. Vickers,  K. Ishida, 
  • Pages: 683-686
  • First Published: 27 January 2003

Shallow acceptors in Si/SiGe quantum well heterostructures

V. Ya. Aleshkin,  V. I. Gavrilenko,  D. V. Kozlov, 
  • Pages: 687-689
  • First Published: 27 January 2003

Formation of shallow donors and acceptors in silicon irradiated with either electrons or high-energy ions and annealed at temperatures of 400–700 °C

I. V. Antonova,  S. A. Smagulova,  L. N. Safronov, 
  • Pages: 690-693
  • First Published: 27 January 2003

Defect-impurity interactions in irradiated tin-doped Cz-Si crystals

L. I. Khirunenko,  O. A. Kobzar,  Yu. V. Pomozov,  M. G. Sosnin,  N. A. Tripachko,  V. P. Markevich,  L. I. Murin,  A. R. Peaker, 
  • Pages: 694-697
  • First Published: 27 January 2003

Depth profile of thermal donors in NTDCZSi

Y. X. Li,  M. X. Pan,  T. J. Liu,  Q. Y. Hao,  H. Y. Liu,  C. C. Liu,  Y. S. Xu,  D. R. Yang,  D. L. Que, 
  • Pages: 698-701
  • First Published: 27 January 2003

Radiation-induced defects and their transformations in oxygen-rich germanium crystals

V. P. Markevich,  V. V. Litvinov,  L. Dobaczewski,  J. L. Lindström,  L. I. Murin,  A. R. Peaker, 
  • Pages: 702-706
  • First Published: 27 January 2003

Impurity pairs and relaxation of excitation in silicon doped with group III and V impurities

Ya. E. Pokrovskii,  N. A. Khvalkovskii, 
  • Pages: 707-710
  • First Published: 27 January 2003

Muon and hydrogen states in II–VI semiconductor compounds. A μSR study

A. Weidinger,  H. V. Alberto,  J. M. Gil,  R. C. Vilão,  J. Piroto Duarte,  N. Ayres de Campos, 
  • Pages: 711-714
  • First Published: 27 January 2003

Study of complex free-carrier profiles in hydrogen implanted and annealed silicon

M. Kaniewska,  I. V. Antonovaonova,  V. P. Popov, 
  • Pages: 715-720
  • First Published: 27 January 2003

Singly ionized magnesium–oxygen complex impurities in silicon

L. T. Ho, 
  • Pages: 721-725
  • First Published: 27 January 2003

Electrically pumped far-infrared population inversion in heterostructures doped by shallow impurity centers

S. G. Pavlov, 
  • Pages: 726-729
  • First Published: 27 January 2003

THz radiation from optically pumped n-type GaAs/InGaAs multi quantum well heterostructures

N. A. Bekin,  L. V. Krasilnikova,  R. Kh. Zhukavin,  B. N. Zvonkov,  V. N. Shastin, 
  • Pages: 730-733
  • First Published: 27 January 2003

Exciton–donor complexes in a semiconductor quantum dot

A. A. Avetisyan,  A. P. Djotyan,  E. M. Kazaryan, 
  • Pages: 734-739
  • First Published: 27 January 2003

Charged donor in a quantum well subjected to electric and strong magnetic fields

B. S. Monozon,  P. Schmelcher, 
  • Pages: 740-746
  • First Published: 27 January 2003

Stability of D– in quantum wells under strong magnetic fields

I. D. Mikhailov,  F. J. Betancur,  R. A. Escorcia,  J. Sierra-Ortega, 
  • Pages: 747-753
  • First Published: 27 January 2003

On the virial theorem value and scaling of Coulomb-bound states in semiconductor heterostructures: effects of magnetic fields

M. de Dios-Leyva,  O. Fernandez-Gómez,  E. Reyes-Gómez,  L. E. Oliveira, 
  • Pages: 754-758
  • First Published: 27 January 2003

Characterization of Sb-doped CuInS2 crystals

H. Komaki,  K. Yoshino,  Y. Akaki,  M. Yoneta,  T. Ikari, 
  • Pages: 759-762
  • First Published: 27 January 2003

Shallow and deep excited states of mesoscopic structure in AgI–γAl2O3 composites

Shosuke Mochizuki,  Fumito Fujishiro, 
  • Pages: 763-766
  • First Published: 27 January 2003

Shallow- and deep-luminescence centers in AgI-based superionic conductor glass

Shosuke Mochizuki,  Fumito Fujishiro, 
  • Pages: 767-770
  • First Published: 27 January 2003

Acceptor states detection by microwave and current modulation spectroscopy

M. A. Chernikov,  O. A. Ryabushkin, 
  • Pages: 771-775
  • First Published: 27 January 2003

Multiphonon emission process on DX-like centers in indium doped Pb0.75Sn0.25Te

N. Romčević,  D. R. Khokhlov,  D. Stojanović,  M. Romčević,  A. V. Nikorich, 
  • Pages: 776-779
  • First Published: 27 January 2003

Superdiffusion of impurity atoms in damage-free regions of semiconductors

Takao Wada,  Hiroshi Fujimoto, 
  • Pages: 780-787
  • First Published: 27 January 2003

Electron beam doping of impurity atoms into semiconductors by superdiffusion

Takao Wada,  Hiroshi Fujimoto, 
  • Pages: 788-794
  • First Published: 27 January 2003

Coordination positron-trapping centers in vitreous chalcogenide semiconductors

O. Shpotyuk,  J. Filipecki,  A. Kozdras,  A. Kovalskiy, 
  • Pages: 795-798
  • First Published: 27 January 2003

Structural and Electronic Properties of 240° Nanocones

R. Mota,  M. Machado,  P. Piquini, 
  • Pages: 799-802
  • First Published: 27 January 2003