Volume 0, Issue 2 pp. 605-608
Original Paper

Mixing of impurity levels by a built-in electric field in a CdMgTe/CdZnTe heterostructure

J. Łusakowski

Corresponding Author

J. Łusakowski

Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

Phone: +48 22 553 21 45, Fax: +48 22 621 97 12Search for more papers by this author
G. Cywiński

G. Cywiński

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

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K. Korona

K. Korona

Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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W. Knap

W. Knap

Université de Montpellier II, CNRS UMR, Place Eugene Bataillon, 34095 Montpellier, France

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J. Kossut

J. Kossut

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

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First published: 27 January 2003

Abstract

Magneto-optical studies were performed on a Cd0.88Mg0.12Te/Cd0.97Zn0.03Te heterostructure in which the CdMgTe barrier was δ-doped with iodine donors and the CdZnTe channel was δ-doped with nitrogen acceptors. The photoluminescence spectrum was dominated by a line with an energy close to that of the CdMgTe barrier which is interpreted as a result of donor–acceptor transitions. Stokes parameters polarisation spectroscopy showed that the line was purely circularly but very weakly polarised (8% in 6 T). It was proposed that this weak degree of polarisation comes from mixing of impurity levels by a strong electric field present in the investigated structure.

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