Original Paper
Electrically pumped far-infrared population inversion in heterostructures doped by shallow impurity centers
Abstract
Electrically pumped far-infrared lasers based on intra-center optical transitions of shallow impurity centers embedded in the barrier of a semiconductor heterostructure are proposed. The principles of population inversion between excited states of the impurity center under conditions of ballistic heating of well electrons at low lattice temperature are described.
