Volume 0, Issue 2 pp. 694-697

Original Paper

Defect-impurity interactions in irradiated tin-doped Cz-Si crystals

L. I. Khirunenko,

L. I. Khirunenko

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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O. A. Kobzar,

O. A. Kobzar

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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Yu. V. Pomozov,

Yu. V. Pomozov

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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M. G. Sosnin,

M. G. Sosnin

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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N. A. Tripachko,

N. A. Tripachko

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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V. P. Markevich,

Corresponding Author

V. P. Markevich

[email protected]

Centre for Electronic Materials, UMIST, Sackville Street, Manchester M60 1QD, UK

Institute of Solid State and Semiconductor Physics, P. Brovki str. 17, 220072 Minsk, Belarus

Phone: +44 161 2004746, Fax: +44 161 2004770Search for more papers by this author

L. I. Murin,

L. I. Murin

Institute of Solid State and Semiconductor Physics, P. Brovki str. 17, 220072 Minsk, Belarus

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A. R. Peaker,

A. R. Peaker

Centre for Electronic Materials, UMIST, Sackville Street, Manchester M60 1QD, UK

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L. I. Khirunenko,

L. I. Khirunenko

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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O. A. Kobzar,

O. A. Kobzar

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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Yu. V. Pomozov,

Yu. V. Pomozov

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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M. G. Sosnin,

M. G. Sosnin

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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N. A. Tripachko,

N. A. Tripachko

Institute of Physics of The Ukrainian Academy of Sciences, Prospekt Nauki 46, 03028 Kiev, Ukraine

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V. P. Markevich,

Corresponding Author

V. P. Markevich

[email protected]

Centre for Electronic Materials, UMIST, Sackville Street, Manchester M60 1QD, UK

Institute of Solid State and Semiconductor Physics, P. Brovki str. 17, 220072 Minsk, Belarus

Phone: +44 161 2004746, Fax: +44 161 2004770Search for more papers by this author

L. I. Murin,

L. I. Murin

Institute of Solid State and Semiconductor Physics, P. Brovki str. 17, 220072 Minsk, Belarus

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A. R. Peaker,

A. R. Peaker

Centre for Electronic Materials, UMIST, Sackville Street, Manchester M60 1QD, UK

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First published: 27 January 2003

https://doi.org/10.1002/pssc.200306195

Citations: 13

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Abstract

Results of a combined infrared absorption (IR) and deep-level transient spectroscopy (DLTS) study of defects induced by irradiation with fast electrons in Sn-doped Czochralski-grown Si crystals are reported. Tin atoms were found to interact effectively with vacancy as well as with interstitial-type radiation-induced defects. Manifestations of stable tin-vacancy and tin-interstitial carbon atom complexes were observed in DLTS and IR absorption spectra. Defect transformations upon heat-treatments of the irradiated samples were studied. Tin atoms were found to be effective traps for mobile vacancy–oxygen (V–O) complexes. A local vibrational mode of a Sn–V–O complex has been identified.

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Volume0, Issue2

February 2003

Pages 694-697

Defect-impurity interactions in irradiated tin-doped Cz-Si crystals

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Defect-impurity interactions in irradiated tin-doped Cz-Si crystals

Abstract

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