Original Paper
Localized and resonant shallow donor states in GaAs/InGaAs double-quantum-well heterostructures
Abstract
The spectrum, the wave functions of shallow donor states in double-quantum-well heterostructures, and the cross section of infrared radiation absorption at intracentre and impurity-band transitions have been calculated. Calculations were performed by expanding the wave function in terms of the wave eigenfunctions of electron in a quantum well system unperturbed by the impurity potential. This method allows determining the energy levels of not only localized but also of resonant states in a continuous spectrum.
