Electron beam doping of impurity atoms into semiconductors by superdiffusion

Thin diffusion layers (50–1000 Å) in semiconductors can be introduced by electron beam doping (EBD) processes. In this technique, an evaporate film or impurity layer is irradiated with an electron beam to induce superdiffusion into the underlying semiconductor substrate. In this study, two- and three-layer structures are examined without annealing, and the EBD of P, B, N and Al into Si, diamond and SiC substrates is investigated.