Volume 0, Issue 2 pp. 613-617
Original Paper

Anti-Stokes luminescence in ternary Zn1–xMgxSe compounds at liquid helium temperature

A. A. Belov

A. A. Belov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prosp. 53, 119991 Moscow, Russia

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F. Firszt

F. Firszt

Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

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V. S. Gorelik

V. S. Gorelik

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prosp. 53, 119991 Moscow, Russia

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A. L. Karuzskii

A. L. Karuzskii

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prosp. 53, 119991 Moscow, Russia

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E. I. Mahov

E. I. Mahov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prosp. 53, 119991 Moscow, Russia

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H. Męczyńska

Corresponding Author

H. Męczyńska

Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

Phone: +48 56 6113305, Fax: +48 56 6225397Search for more papers by this author
A. V. Perestoronin

A. V. Perestoronin

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prosp. 53, 119991 Moscow, Russia

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P. P. Sverbil

P. P. Sverbil

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Prosp. 53, 119991 Moscow, Russia

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J. Szatkowski

J. Szatkowski

Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

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First published: 27 January 2003

Abstract

Investigations of photoluminescence and Raman scattering in ternary Zn1–xMgxSe compounds at 4.2 K were performed both in the Stokes and anti-Stokes regions using the cw laser excitation with various wavelengths in the transparency band of the crystals. The anti-Stokes luminescence was observed for the first time in ternary Zn1–xMgxSe compounds. We suggest that the anti-Stokes emission is generated by the two-step excitation via deep-level centers. The low-temperature anti-Stokes photoluminescence is found to be a common property of the wide gap semiconductors and can probe the spatial distribution profiles of impurities in a volume of crystals.

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