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Original Papers
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Magnetic and ESR investigations of Sm6(Mn1−x Fex)23 compounds for 0 < x < 0.55 in the paramagnetic range
- Pages: 359-366
- First Published: 16 February 1983
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Coherency of the interphase boundary and elastic strain in the epitaxial system Ge/GaAs
- Pages: 367-371
- First Published: 16 February 1983
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TiNi aging and its effect on the start temperature of the martensitic transformation
- Pages: 373-377
- First Published: 16 February 1983
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Effect of Li loss on some physical properties of AlLi alloy
- Pages: 379-384
- First Published: 16 February 1983
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Kinetics of radiation-induced conductivity in some polymers
- Pages: 385-392
- First Published: 16 February 1983
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Isochronal annealing of quenched CdS phosphors
- Pages: 393-399
- First Published: 16 February 1983
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Magnetic properties of bulk amorphous alloys Gd4Co3, Er4Co3, and Sm4Co3
- Pages: 401-404
- First Published: 16 February 1983
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The origin of Mo2C precipitate morphology in molybdenum
- Pages: 409-420
- First Published: 16 February 1983
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Temperature modulation and temperature hysteresis studies of dysprosium
- Pages: 421-432
- First Published: 16 February 1983
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Negative differential resistances in ferromagnetic semiconductor CdCr2Se4 single crystals
- Pages: 433-439
- First Published: 16 February 1983
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Dislocation structures in aluminium-rich Ni3(Al, Ta) and Ni3(Al, Hf)
- Pages: 441-449
- First Published: 16 February 1983
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An investigation on the activation volume for plastic flow in nickel determined by micro and macro tests
- Pages: 451-458
- First Published: 16 February 1983
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The distinction of different kinds of thermally induced defects in silicon
- Pages: 459-464
- First Published: 16 February 1983
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Microscopic degradation model for ZnO varistors
- Pages: 465-472
- First Published: 16 February 1983
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Eigenschaften einiger störstellenkomplexe von gold in silizium
- Pages: 473-482
- First Published: 16 February 1983
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Flash lamp annealing of ion-implanted polycrystalline silicon
- Pages: 483-488
- First Published: 16 February 1983
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ZnSe:Mn in AC thin film electroluminescence devices
- Pages: 489-494
- First Published: 16 February 1983
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Dielectric dispersion of relaxor ferroelectrics (SBN 75 and PLZT 8/65/35)
- Pages: 495-500
- First Published: 16 February 1983
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X-ray study of niobium disulfide intercalated with copper
- Pages: 501-509
- First Published: 16 February 1983
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Magnetoresistance and conductivity in the binary system titanium–oxygen. II. Semiconductive Titanium Oxides†
- Pages: 511-518
- First Published: 16 February 1983
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An ion-implanted resistor as thermal transient sensor for the determination of the thermal diffusivity in silicon
- Pages: 519-523
- First Published: 16 February 1983
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Glide dislocations on cube planes in a low stacking-fault energy alloy
- Pages: 525-535
- First Published: 16 February 1983
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Capacitance of amorphous silicon pin solar cells
- Pages: 537-545
- First Published: 16 February 1983
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Determination of electron depth-dose function for kilovolt electrons on GaAsP
- Pages: 547-553
- First Published: 16 February 1983
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Modulation piezoreflectance of cubic polycrystals
- Pages: 555-558
- First Published: 16 February 1983
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Determination of grain boundary rotation parameters from Kikuchi patterns. I. A simplified method for determining the accurate orientation relationship of two grains
- Pages: 559-566
- First Published: 16 February 1983
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Interfaces structure in relation with the mechanisms in the reaction coppersilicon
- Pages: 567-576
- First Published: 16 February 1983
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Thermoluminescence of low-temperature X-irradiated MgO and MgO:Li single crystals
- Pages: 577-582
- First Published: 16 February 1983
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Electrical properties of Mo-cadmium chalcogenide Schottky barrier diodes
- Pages: 583-590
- First Published: 16 February 1983
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A new approach to the analysis of steady-state space-charge-limited currents using their activation energies. An application to a-As2Se3
- Pages: 591-594
- First Published: 16 February 1983
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Influence of composition faults on the AC conductivity of ZnIn2S4 (III)
- Pages: 595-599
- First Published: 16 February 1983
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The defect accumulation and irradiation-induced lattice strain in Si at high-dose neutron irradiation
- Pages: 601-606
- First Published: 16 February 1983
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High-resolution study of the one- and two-dimensional long-period antiphase boundary structures in Au4Zn
- Pages: 607-616
- First Published: 16 February 1983
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Structure, magnetic and magneto-optical properties, and 57Fe Mössbauer effect in a new variety of Heusler alloy: PtFeSb
- Pages: 617-623
- First Published: 16 February 1983
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Creep at low and average stress of several highly concentrated solid solutions of the cubic centered type
- Pages: 625-634
- First Published: 16 February 1983
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Development of stress in nickel during hydrogen diffusion
- Pages: 635-639
- First Published: 16 February 1983
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Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films
- Pages: 641-645
- First Published: 16 February 1983
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The fourier analysis of impedance spectra for electroded solid electrolytes
- Pages: 647-656
- First Published: 16 February 1983
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Mobility and its effect on the performance of polycrystalline solar cells
- Pages: 657-661
- First Published: 16 February 1983
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Crystal structure of (DEPA) (TCNQ)4 and stoichiometric variation of some related TCNQ salts
- Pages: 663-667
- First Published: 16 February 1983
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Latent-image and fog formation in silver halide microcrystals by the action of a sequence of light and electric pulses
- Pages: 669-673
- First Published: 16 February 1983
Short Notes
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Luminescence and stimulated emission of Nd3+ ions in LaMgAl11O19 crystals in the 4F3/2→4I11/2 and 4F3/2→4I13/2 transitions†
- Pages: K111-K116
- First Published: 16 February 1983
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One-direction motion of bloch lines during their nonlinear oscillation
- Pages: K117-K119
- First Published: 16 February 1983
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Electron microscopic investigation of the contrast on dislocation loops seen edge-on in InP (B3 structure)
- Pages: K121-K123
- First Published: 16 February 1983
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Dynamic changes of the domain structure period in magnetic dielectric
- Pages: K125-K127
- First Published: 16 February 1983
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The degradation of semiconductor mechanical properties induced by microinclusions
- Pages: K129-K132
- First Published: 16 February 1983
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Solid solution hardening of Cd-Zn single crystals at 1.5 K
- Pages: K133-K135
- First Published: 16 February 1983
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On a slip-induced anisotropy of the electrical resistance of GaP
- Pages: K137-K139
- First Published: 16 February 1983
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Simple improvement of the Lindner high-frequency MOS capacitance approximation
- Pages: K141-K144
- First Published: 16 February 1983
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Some properties of silver photodiffused chalcogenide glasses
- Pages: K145-K148
- First Published: 16 February 1983
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151Eu Mössbauer effect measurement in Eu4As3
- Pages: K149-K151
- First Published: 16 February 1983
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Temperature dependence of the absorption edge in Cd1-gMngSe
- Pages: K153-K156
- First Published: 16 February 1983
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Penetration of electromagnetic fields through thin foils of niobium and indium
- Pages: K157-K160
- First Published: 16 February 1983
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Second harmonic suppression in delayed domain mode of GaAs samples
- Pages: K161-K163
- First Published: 16 February 1983
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Analysis of first-order glow curves by the Balarin-Zetzsche method in differential form
- Pages: K169-K173
- First Published: 16 February 1983
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Positron annihilation study of quenched-in defects in dilute AlGe and AlSi alloys
- Pages: K175-K177
- First Published: 16 February 1983
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Influence of permanent magnetic field on dielectric properties of transparent ferroelectric PLZT ceramics
- Pages: K179-K182
- First Published: 16 February 1983
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Hall effect measurements in high-temperature deposited and heat treated films of InTe and InSe
- Pages: K183-K185
- First Published: 16 February 1983
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An iteration procedure in the texture analysis
- Pages: K187-K189
- First Published: 16 February 1983
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Determination of the electron backscattering coefficient for thin films using double layers
- Pages: K191-K193
- First Published: 16 February 1983
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Bleaching of F2 centers in LiF:F2 color center lasers
- Pages: K195-K198
- First Published: 16 February 1983
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Electrical properties of CuInSe2 single crystals grown by the vertical bridgman technique
- Pages: K199-K203
- First Published: 16 February 1983
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The dependence of the elastic relaxation on a bias stress in pure Nb in the temperature region of the α-maximum
- Pages: K205-K208
- First Published: 16 February 1983
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Optical filters based on pyrolytic films of metal oxides
- Pages: K209-K210
- First Published: 16 February 1983
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Internal friction by a second-phase particle in AlGe alloy
- Pages: K211-K213
- First Published: 16 February 1983