physica status solidi (b): Vol 202, No 1

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In 2022, the youngest family member physica status solidi (RRL) – Rapid Research Letters is turning 15 years. To celebrate this milestone, we present a new virtual collection with invited articles.

As we celebrate the 60^th anniversary year of the physica status solidi family, click here to access our continuously updated collection of invited articles written by authors and partners of the pss journals.

physica status solidi (b)

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physica status solidi (b): Volume 202, Issue 1

Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment

Polytypism and Properties of Silicon Carbide

On the Band Gap Variation in SiC Polytypes

Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiC

Global Band Structure and Near-Band-Edge States

First-Principles Calculations of Impurity States in 3C-SiC

Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype

SiC Seeded Crystal Growth

Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

Simulation of Sublimation Growth of SiC Single Crystals

Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen

Step-Controlled Epitaxial Growth of High-Quality SiC Layers

Homoepitaxial VPE Growth of SiC Active Layers

Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation

SiC Dopant Incorporation Control Using Site-Competition CVD

Growth of SiC by “Hot-Wall” CVD and HTCVD

3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates

Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam Epitaxy

Homoepitaxial SiC Growth by Molecular Beam Epitaxy

Simulations and Experiments of 3C-SiC/Si Heteroepitaxial Growth

Atomic and Electronic Structure of SiC Surfaces from ab-initio Calculations

Structure and Properties of Cubic Silicon Carbide (100) Surfaces: A Review

Atomic Structure of Hexagonal SiC Surfaces

Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

Surface Studies on SiC as Related to Contacts

The Physics of Ohmic Contacts to SiC

A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

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physica status solidi (b)

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physica status solidi (b): Volume 202, Issue 1

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Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment

Polytypism and Properties of Silicon Carbide

On the Band Gap Variation in SiC Polytypes

Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiC

Global Band Structure and Near-Band-Edge States

First-Principles Calculations of Impurity States in 3C-SiC

Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype

SiC Seeded Crystal Growth

Modified-Lely SiC Crystals Grown in [11-00] and [112-0] Directions

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

Simulation of Sublimation Growth of SiC Single Crystals

Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen

Step-Controlled Epitaxial Growth of High-Quality SiC Layers

Homoepitaxial VPE Growth of SiC Active Layers

Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation

SiC Dopant Incorporation Control Using Site-Competition CVD

Growth of SiC by “Hot-Wall” CVD and HTCVD

3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates

Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam Epitaxy

Homoepitaxial SiC Growth by Molecular Beam Epitaxy

Simulations and Experiments of 3C-SiC/Si Heteroepitaxial Growth

Atomic and Electronic Structure of SiC Surfaces from ab-initio Calculations

Structure and Properties of Cubic Silicon Carbide (100) Surfaces: A Review

Atomic Structure of Hexagonal SiC Surfaces

Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

Surface Studies on SiC as Related to Contacts

The Physics of Ohmic Contacts to SiC

A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

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