Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers
Yu.A. Vodakov
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorA. D. Roenkov
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorM. G. Ramm
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorE. N. Mokhov
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorYu.N. Makarov
Fluid Mechanics Department, University of Erlangen-Nürnberg, Cauerstraße 4, D-91058 Erlangen, Germany
Search for more papers by this authorYu.A. Vodakov
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorA. D. Roenkov
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorM. G. Ramm
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorE. N. Mokhov
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorYu.N. Makarov
Fluid Mechanics Department, University of Erlangen-Nürnberg, Cauerstraße 4, D-91058 Erlangen, Germany
Search for more papers by this authorAbstract
Analysis of specific features of sublimation growth of bulk SiC crystals in presence of Ta is performed. Control of doping and formation of different SiC polytypes is discussed. Description of mechanisms responsible for generation of micropipes during sublimation growth of bulk crystals is given. It is shown that use of Ta is promising for growth of bulk SiC crystals.
References
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