Research Article
Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen
S. N. Gorin,
L. M. Ivanova,
S. N. Gorin
Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninskii prospekt 49, Moscow 117334, Russia Fax: (095)135-8680; tel.: (095)135-8630
Search for more papers by this authorL. M. Ivanova
Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninskii prospekt 49, Moscow 117334, Russia Fax: (095)135-8680; tel.: (095)135-8630
Search for more papers by this authorS. N. Gorin,
L. M. Ivanova,
S. N. Gorin
Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninskii prospekt 49, Moscow 117334, Russia Fax: (095)135-8680; tel.: (095)135-8630
Search for more papers by this authorL. M. Ivanova
Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninskii prospekt 49, Moscow 117334, Russia Fax: (095)135-8680; tel.: (095)135-8630
Search for more papers by this authorFirst published: 16 November 2001
Citations: 43
Abstract
This overview, based on earlier published papers, concerns the growth and some properties of single and polycrystalline cubic silicon carbide (3C-SiC) prepared by thermal decomposition of methyl trichlorosilane in hydrogen on resistively heated graphite substrates in a temperature range of 1500 to 2100 K. The morphology of faceted crystals and their specific twin structure, as well as the effects of crystallographic polarity of the 3C-SiC structure (sphalerite type) on impurity segregation and etching are considered in some detail.
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