On the Band Gap Variation in SiC Polytypes
W. van Haeringen
Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorP. A. Bobbert
Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorW. H. Backes
Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorW. van Haeringen
Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorP. A. Bobbert
Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorW. H. Backes
Department of Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorAbstract
Electronic band gaps of SiC polytypes are reproduced within an interface matching technique of electronic wave functions. Essential features resulting from this treatment are introduced in a one-dimensional model, leading to a transparent description of the electronic band gap variation among polytypes. It is discussed in what sense the polytypes of SiC are exceptional in showing a relatively strong band gap variation, contrary to e.g. polytypes of ZnS and hypothetical polytypes made up from Si, C or AlAs.
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