Research Article
Homoepitaxial VPE Growth of SiC Active Layers
A. A. Burk Jr.,
L. B. Rowland,
A. A. Burk Jr.
Northrop Grumman Electronic Sensors and Systems Division, Baltimore, MD-21203, USA
Search for more papers by this authorL. B. Rowland
Northrop Grumman Science and Technology Center, Pittsburgh, PA-15235, USA
Search for more papers by this authorA. A. Burk Jr.,
L. B. Rowland,
A. A. Burk Jr.
Northrop Grumman Electronic Sensors and Systems Division, Baltimore, MD-21203, USA
Search for more papers by this authorL. B. Rowland
Northrop Grumman Science and Technology Center, Pittsburgh, PA-15235, USA
Search for more papers by this authorFirst published: 16 November 2001
Citations: 33
Abstract
SiC active layers of tailored thickness and doping form the heart of all SiC electronic devices. These layers are most conveniently formed by vapor phase epitaxy (VPE). Exacting requirements are placed upon the SiC-VPE layers' material properties by both semiconductor device physics and available methods of device processing. In this paper, the current ability of the SiC-VPE process to meet these requirements is described along with continuing improvements in SiC epitaxial reactors, processes and materials.
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