Ultrawide-Bandgap Boron Nitride Power Diodes

In article number 2200397, Yuji Zhao and co-workers report on a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide bandgap boron-nitride (BN)-based vertical junction devices, including hexagonal (h)-BN Schottky diode, h-BN p–n diode, and h-BN/AlN p–n diode. The BN devices show outstanding performance and a high potential for future power electronic devices. The critical electric field of 2 × 10¹⁶ cm⁻³ p-type-doped h-BN is calculated to be 13.6 MV/cm.

Fully-Transparent Solar-Blind Photodetector

In article number 2200512, Lijuan Ye, Hong Zhang, Wanjun Li, and co-workers propose a strategy to construct a fully transparent and high-performance solar-blind photoconductive detector based on amorphous Ga₂O₃ film, which effectively detects extremely weak solar-blind deep-ultraviolet signals through simulated corona discharge detection.

Herein, the emerging field of research focuses on the intercalation of rare gas solids on graphene and hexagonal boron nitride to generate novel intercalated systems. Despite the availability of a few experimental studies on this topic, vast research and niche application opportunities still exist in this nascent and rapidly growing field.

Ultrasmall CoSe₂ nanoparticles are successfully grown on MoS₂ nanofilms using a facile and low-cost hydrothermal method. With the small Tafel slope (37.8 mV dec⁻¹) and low overpotential, the CoSe₂/MoS₂ hybrid catalyst shows good hydrogen evolution reaction activity. In addition, the CoSe₂/MoS₂ catalyst exhibits long-term durability under acidic conditions as well.

There are many researches on Ag-based and Au-based halide perovskites, but few on CuAu-based ones. Herein, the authors investigate the effect of mixed anions and strain on the compounds and find some interesting results, mainly resulting from the Jahn–Teller effect in CuAu-based double halide perovskites.

The optoelectronic properties of a series of novel Pb-free perovskite-like materials AMX₄ (A = Cs, Ag and Rb; M = In, Sb and Bi; X = Cl, Br and I) are investigated by first-principles calculations, and their device performances are further simulated by the SCAPS code, which exhibit promising potential in the photovoltaic application.

A colloidal quantum dot-based three-band infrared detector with short-wave infrared of 1.7 and 2.4 μm and midwave infrared of 4 μm controlled by the bias voltage with spatially stable doping of Ag₂Te nanocrystals is studied.

A new growth strategy is created by designing ultralow concentration precursors and Se catalysts, achieving the ultrathin α-Fe₂O₃ 2D nanosheets with single-crystalline quality and large lateral size after tuning the growth temperature. The reasonable photoconductive response performance is shown by α-Fe₂O₃ photodetectors. Herein, a special growth technique for the synthesis of ultrathin 2D nonlayered materials is provided.

A fully transparent solar-blind deep-ultraviolet photoconductive detector with transparent electrodes is successfully constructed based on amorphous Ga₂O₃ films. The device demonstrates an ultra-high responsivity of 1.3 × 10⁴ A W⁻¹, a detectivity of 3.2 × 10¹⁴ Jones, and an external quantum efficiency of 6.7 × 10⁶%. Also, the fully transparent device is applied to a proof-of-concept of high-voltage corona system to achieve solar-blind signal detection.

The rationale of the selective area sublimation (SAS) is confirmed as a strong anisotropic decomposition driven by lattice-asymmetry of wurtzite crystal: the sublimation preferably starts along the -c axis due to the relatively lower decomposition energy barrier. The fabrication of site- and size-controlled GaN nanowires has been achieved by utilizing the SAS process, exhibiting good controllability on the sidewall of nanowires.

A device study using technology computer-aided design simulation is performed to theoretically analyze electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode, which provides an understanding of the device principles of vertical BN junctions, which can serve as a reference for the future development of BN power electronics.

An all-dielectric metasurface with tunable Kerker condition to enhance emission from single nitrogen-vacancy center at zero-phonon line (ZPL) wavelength of 640 nm is discussed. The coherent superposition of multipolar moments results in Kerker condition, which depends on structural parameters of metasurfaces. Purcell enhancement of 300 times is achieved at ZPL, which is tunable by changing Kerker condition.

An ultranarrow-band ultraviolet (UV) GaN detector based on a simple p-GaN/un-intentionally doped GaN epilayer is presented. The device response is centred at 366 nm with only ≈5 nm width and UV–vis rejection ratio of >2 × 10³. The results demonstrate an innovative methodology for achieving a stable and high spectrum-selective UV photodetection without involving complex device architecture.

A novel method to fabricate semipolar InGaN quantum dots (QDs) by metal–organic vapor phase epitaxy is reported. The ellipse-shaped semipolar InGaN QDs with 523 nm photoluminescence emission at room temperature are formed on the GaN V-shaped pits directly grown on c-plane patterned sapphire substrate.

Herein, different heights of InGaN multiple quantum well (MQW) nanorods are fabricated and decorated with Au nanoparticles. The Au nanoparticles were found to be able to enhance the resonant energy transfer (RET) process between InGaN MQWs and quantum dots. The high RET efficiency in the hybrid structure demonstrated high potential for usage in energy conversion devices.

Herein, atomic structure and electronic properties of g-GaN/Al_xGa_1−xN heterostructure with different Al components and interlayer distance are discussed. Ordered arrangement of Al components in Al_xGa_1−xN materials is more conducive to forming heterostructures. The g-GaN/Al_0.5Ga_0.5N heterostructure is most stable by comparing binding energy under different Al components. The optimal interlayer distance range of heterostructure is 2.5–3 Å.