Metal–Organic Vapor-Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V-Shaped Pits
Xun Wang
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorXu Han
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorJiadong Yu
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorZhibiao Hao
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorYi Luo
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorChangzheng Sun
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorYanjun Han
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorBing Xiong
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorJian Wang
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorHongtao Li
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorCorresponding Author
Lai Wang
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorXun Wang
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorXu Han
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorJiadong Yu
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorZhibiao Hao
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorYi Luo
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorChangzheng Sun
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorYanjun Han
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorBing Xiong
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorJian Wang
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorHongtao Li
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorCorresponding Author
Lai Wang
Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084 China
Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorAbstract
Semipolar {101} InGaN quantum dots (QDs) formed on GaN V-shaped pits by metal–organic vapor-phase epitaxy (MOVPE) with a growth interruption method are reported. The 3D GaN V-pit structures are directly grown on a patterned sapphire substrate (PSS). By adjusting the pattern arrangement direction on the substrate, it is observed in the scanning electron microscopy (SEM) image that elliptical QDs are formed on the {101} semipolar sidewalls of the V-pits with a density of about 5 × 1010 cm−2. The emission wavelength of semipolar InGaN QDs is confirmed by cathodoluminescence (CL). The gradient distribution of In composition and QD size are observed along the sidewall of the V-pits. On this basis, a three-period semipolar InGaN QD sample is prepared. For the temperature-dependent photoluminescence (TDPL) test, the prominent peak of the sample shows a blueshift with the increase in temperature and reaches the green band (≈523 nm) at room temperature (RT). According to time-resolved photoluminescence (TRPL) decay curves, a carrier lifetime of 329.3 ps fit by the stretched exponential model is obtained at RT. Compared with c-plane QDs with the same growth method, the semipolar QDs have a shorter radiative recombination lifetime due to suppressed polarization electric field.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
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