• Issue

    Microwave and Optical Technology Letters: Volume 11, Issue 3

    fmi, 113-168
    20 February 1996
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  • Page: fmi
  • First Published: 20 February 1996

Editorial

Special Issue on the 7th International Conference on Indium Phosphide and Related Materials

D. Pavlidis,  Y. Ashizawa,  T. Enoki,  O. Wada, 
  • Pages: 113-114
  • First Published: 20 February 1996

Invited Papers

InP-based heterojunction bipolar transistors: Recent advances and thermal properties

Hin-Fal Chau,  William Liu,  Edward A. Beam III, 
  • Pages: 114-120
  • First Published: 20 February 1996

InP-based devices and their applications for merged FET-HBT technologies

P. Parikh,  K. Kiziloglu,  M. Mondry,  P. Chavarkar,  B. Keller,  S. Denbaars,  U. Mishra, 
  • Pages: 121-125
  • First Published: 20 February 1996

The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors

U. Auer,  R. Reuter,  P. Ellrodt,  C. Heedt,  W. Prost,  F. J. Tegude, 
  • Pages: 125-128
  • First Published: 20 February 1996

InGaP/InAlAs/InGaAs HEMT using a Pt-based Schottky gate

M. Amano,  S. Fujita,  S. Hosoi,  T. Noda,  A. Sasaki,  Y. Ashizawa, 
  • Pages: 128-131
  • First Published: 20 February 1996

Microwave performance of InP-based HEMTs for low-voltage application

S. Strähle,  B. Henle,  L. Lee,  H. Künzel,  T. Hackbarth,  J. Dickmann,  E. Kohn, 
  • Pages: 131-135
  • First Published: 20 February 1996

0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Takatomo Enoki,  Hiroshi Ito,  Kenji Ikuta,  Yohtaro Umeda,  Yasunobu Ishii, 
  • Pages: 135-139
  • First Published: 20 February 1996

60- and 77-GHz monolithic amplifiers utilizing InP-based HEMTs and coplanar waveguides

M. Berg,  J. Dickmann,  R. Guehl,  W. Bischof, 
  • Pages: 139-145
  • First Published: 20 February 1996

Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and 350-GHz fmax with 160-GHz fT

M. Chertouk,  H. Heiss,  D. Xu,  S. Kraus,  W. Klein,  G. Böhm,  G. Tränkle,  G. Weimann, 
  • Pages: 145-147
  • First Published: 20 February 1996

GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors

Yi-Jen Chan,  Chia-Song Wu,  Jen-Inn Chyl,  Jia-Lin Shieh, 
  • Pages: 148-150
  • First Published: 20 February 1996

Graded-GaAs1−xPx bases in heterojunction bipolar transistors with InGaP emitters

Michio Ohkubo,  Nariaki Ikeda,  Takao Ninomiya, 
  • Pages: 150-153
  • First Published: 20 February 1996

Monte Carlo analysis of ultrahigh-speed InP/InGaAs HBTs

G. Khrenov,  E. Kulkova, 
  • Pages: 154-159
  • First Published: 20 February 1996

Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

Hiroshi Masuda,  Tomonori Tanoue,  Tohru Oka,  Akihisa Terano,  Michael W. Pierce,  Kazuhiko Hosomi,  Kiyoshi Ouchi,  Teruo Mozume, 
  • Pages: 159-163
  • First Published: 20 February 1996

Analysis of the large-signal characteristics of InP/InGaAs-based optoelectronic preamplifiers

A. Samelis,  D. Pavlidis,  S. Chandrasekhar,  L. M. Lunardi, 
  • Pages: 163-168
  • First Published: 20 February 1996