Microwave and Optical Technology Letters

GaAs-based In_0.29 Al_0.71As/In_0.3Ga_0.7As high-electron mobility transistors

Corresponding Author

Yi-Jen Chan

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of ChinaSearch for more papers by this author

Chia-Song Wu,

Chia-Song Wu

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

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Jen-Inn Chyl,

Jen-Inn Chyl

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

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Jia-Lin Shieh,

Jia-Lin Shieh

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

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Yi-Jen Chan,

Corresponding Author

Yi-Jen Chan

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of ChinaSearch for more papers by this author

Chia-Song Wu,

Chia-Song Wu

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

Search for more papers by this author

Jen-Inn Chyl,

Jen-Inn Chyl

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

Search for more papers by this author

Jia-Lin Shieh,

Jia-Lin Shieh

Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, Republic of China

Search for more papers by this author

First published: 20 February 1996

https://doi.org/10.1002/(SICI)1098-2760(19960220)11:3<148::AID-MOP10>3.0.CO;2-7

Citations: 2

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Abstract

In_0.29Al_0.71As/In_0.3Ga_0.7 As heterostructures grown on GaAs substrates with a step-graded metamorphic In_xGa_1−x As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In_0.3Ga_0.7As layer used as a buffer can be obtained. A 0.6-μm-long gate HEMT based on this heterostructure demonstrated a g_m of 230 mS/mm, an f_T of 23 GHz, and an f_max of 73 GHz. © 1996 John Wiley & Sons, Inc.

References

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Volume11, Issue3

20 February 1996

Pages 148-150

GaAs-based In_0.29 Al_0.71As/In_0.3Ga_0.7As high-electron mobility transistors

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GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors

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GaAs-based In_0.29 Al_0.71As/In_0.3Ga_0.7As high-electron mobility transistors