60- and 77-GHz monolithic amplifiers utilizing InP-based HEMTs and coplanar waveguides

Monolithic millimeter-wave amplifiers for the frequency ranges of 60 and 77 GHz on an InP substrates are presented. Both circuits use lattice-matched InAlAs/InGaAs/InP HEMTs with triangular-shaped gates and a gate length of L_G = 0.25 μm. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuits are fully passivated and contain common ports for the gate and the drain bias. A gain of 15 dB and input and output matching better than −8 dB were achieved for the 60— and 77—GHz amplifiers, respectively. © 1996 John Wiley & Sons, Inc.