Microwave and Optical Technology Letters

Volume 11, Issue 3 pp. 128-131

InGaP/InAlAs/InGaAs HEMT using a Pt-based Schottky gate

M. Amano,

M. Amano

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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S. Fujita,

Corresponding Author

S. Fujita

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

Angstrom Technology Partnership, 1-1-4 Higashi, Tsukubu, Ibaraki 305, JapanSearch for more papers by this author

S. Hosoi,

S. Hosoi

Toshiba Microelectronics Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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T. Noda,

T. Noda

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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A. Sasaki,

A. Sasaki

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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Y. Ashizawa,

Y. Ashizawa

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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M. Amano,

M. Amano

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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S. Fujita,

Corresponding Author

S. Fujita

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

Angstrom Technology Partnership, 1-1-4 Higashi, Tsukubu, Ibaraki 305, JapanSearch for more papers by this author

S. Hosoi,

S. Hosoi

Toshiba Microelectronics Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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T. Noda,

T. Noda

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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A. Sasaki,

A. Sasaki

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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Y. Ashizawa,

Y. Ashizawa

Toshiba Materials and Devices Research Laboratories, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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First published: 20 February 1996

https://doi.org/10.1002/(SICI)1098-2760(19960220)11:3<128::AID-MOP5>3.0.CO;2-N

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Abstract

Low leakage current and high ϕ_B for a Schottky contact on a thin-In-GaP/InAlAs heterostructure were obtained using annealed Pt Schottky contact metal. An InP-based HEMT using the annealed Pt-based-metals/thin-InGaP/InAlAs Schottky gate contact exhibited dc and rf performance comparable to that of a conventional InP-based HEMT. © 1996 John Wiley & Sons, Inc.

References

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Volume11, Issue3

20 February 1996

Pages 128-131

InGaP/InAlAs/InGaAs HEMT using a Pt-based Schottky gate

Abstract

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InGaP/InAlAs/InGaAs HEMT using a Pt-based Schottky gate

Abstract

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