Microwave and Optical Technology Letters

Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

Corresponding Author

Hiroshi Masuda

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, JapanSearch for more papers by this author

Tomonori Tanoue,

Tomonori Tanoue

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Tohru Oka,

Tohru Oka

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Akihisa Terano,

Akihisa Terano

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Michael W. Pierce,

Michael W. Pierce

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Kazuhiko Hosomi,

Kazuhiko Hosomi

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Kiyoshi Ouchi,

Kiyoshi Ouchi

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Teruo Mozume,

Teruo Mozume

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Hiroshi Masuda,

Corresponding Author

Hiroshi Masuda

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, JapanSearch for more papers by this author

Tomonori Tanoue,

Tomonori Tanoue

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Tohru Oka,

Tohru Oka

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Akihisa Terano,

Akihisa Terano

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Michael W. Pierce,

Michael W. Pierce

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Kazuhiko Hosomi,

Kazuhiko Hosomi

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Kiyoshi Ouchi,

Kiyoshi Ouchi

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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Teruo Mozume,

Teruo Mozume

Central Research Laboratory Hitachi, Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185, Japan

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First published: 20 February 1996

https://doi.org/10.1002/(SICI)1098-2760(19960220)11:3<159::AID-MOP13>3.0.CO;2-6

Citations: 1

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Abstract

A self-aligned process for InP/InGaAs HBTs using T-shaped emitter electrodes has been developed. Using this process, the difference in spacing between the emitter mesa and the base electrode, due to the emitter orientations, can be minimized. The process also reduces differences in characteristics of the HBTs. © 1996 John Wiley & Sons, Inc.

References

1 R. N. Nottenburg, Y. K. Chen, M. B. Panish, D. A. Humphrey, and R. Hamm, “Hot-Electron InGaAs/InP Heterostructure Bipolar Transistors with f_T of 110 GHz,” IEEE Electron Device Lett., Vol. EDL-10, 1989, pp. 30–32.
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Volume11, Issue3

20 February 1996

Pages 159-163

Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

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Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

Abstract

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