Microwave and Optical Technology Letters

Graded-GaAs_1−xP_x bases in heterojunction bipolar transistors with InGaP emitters

Corresponding Author

Michio Ohkubo

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, Japan

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, JapanSearch for more papers by this author

Nariaki Ikeda,

Nariaki Ikeda

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, Japan

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Takao Ninomiya,

Takao Ninomiya

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, Japan

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Michio Ohkubo,

Corresponding Author

Michio Ohkubo

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, Japan

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, JapanSearch for more papers by this author

Nariaki Ikeda,

Nariaki Ikeda

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, Japan

Search for more papers by this author

Takao Ninomiya,

Takao Ninomiya

Yokohama R & D Lab., The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220, Japan

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First published: 20 February 1996

https://doi.org/10.1002/(SICI)1098-2760(19960220)11:3<150::AID-MOP11>3.0.CO;2-F

Citations: 2

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Abstract

We have fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. © 1996 John Wiley & Sons, Inc.

References

1 T. Ijichi, M. Ohkubo, and T. Kikuta, “High Power Operation of 0.98 m̈m InGaAs/GaAs/InGaP Strained Layer Quantum Well Lasers,” IEEE Densi Tokyo, No. 30, 1991, pp. 21–24.
Google Scholar
2 C. R. Abernathy, F. Ren, P. W. Wisk, S. J. Pearton, and R. Esagui, “Improved Performance of Carbon-Doped GaAs Base Heterojunction Bipolar Transistor through the Use of InGaP,” Appl. Phys. Lett., Vol. 61, 1992, pp. 1092–1094.
10.1063/1.107678
CAS Web of Science® Google Scholar
3 S. Tanaka, K. Hiramatsu, Y. Habu, N. Sawaki, and I. Akasaki, “Initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility,” J. Cryst. Growth, Vol. 79, 1986, pp. 978–983.
10.1016/0022-0248(86)90582-8
CAS Web of Science® Google Scholar
4 K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, and Y. Matsuoka, “Effects of a Compositionally Graded-In_x Ga_1-x As Base in Abrupt-Emitter InP/InGaAs HBTs,” Int. Conf. SSDM, Yokohama, 1994, pp. 607–609.
Google Scholar
5 B. T. Cunningham, G. E. Stillman, and G. S. Jackson, “Carbon-Doped GaAs/AlGaAs Heterojunction Bipolar Transistor by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride as a Dopant Source,” Appl. Phys. Lett., Vol. 56, 1990, pp. 361–363.
10.1063/1.102785
CAS Web of Science® Google Scholar
6 G.-W. Wang, R. L. Pierson, P. M. Asbeck, K.-C. Wang, N.-L. Wang, R. Nubling, M. F. Chang, J. Salerno, and S. Sastry, “High-Performance MOCVD-Grown AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base,” IEEE Electron Device Lett., Vol. EDL-12, 1991, pp. 347–349.
10.1109/55.82083
Web of Science® Google Scholar
7 H. Ito, “MOCVD Grown Carbon-Doped Graded-Base AlGaAs/GaAs HBTs,” Electron. Lett., Vol. 23, 1990, pp. 1977–1978.
10.1049/el:19901278
Web of Science® Google Scholar
8 J. W. Matthews and A. E. Blakeslee, “Defect in Epitaxial Multilayers,” J Cryst. Growth, Vol. 27, 1974, pp. 118–125.
CAS Web of Science® Google Scholar
9 M. Ohkubo, A. Iketani, M. Ikeda, and T. Ninomiya, “Emitter Material Comparison between InGaP and InGaAsP in GaAs-Based Heterojunction Bipolar Transistors,” Jpn. J. Appl. Phys., Vol. 33, 1994, L993–995.
10.1143/JJAP.33.L993
CAS Web of Science® Google Scholar
10 J.-Y. Emery, C. Starck, L. Goldstein, A. Ponchet, and A. Rocher, “Gas Source Molecular Beam Epitaxy of Alternated Tensile/Compressive Strained GaInAsP Multiple Quantum Wells Emitting at 1.5/m̈m,” J Cryst. Growth, Vol. 127, 1993, pp. 241–245.
10.1016/0022-0248(93)90613-2
CAS Web of Science® Google Scholar

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Volume11, Issue3

20 February 1996

Pages 150-153

Graded-GaAs_1−xP_x bases in heterojunction bipolar transistors with InGaP emitters

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Graded-GaAs1−xPx bases in heterojunction bipolar transistors with InGaP emitters

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Graded-GaAs_1−xP_x bases in heterojunction bipolar transistors with InGaP emitters