Microwave performance of InP-based HEMTs for low-voltage application
First published: 20 February 1996
Citations: 2
Abstract
Usually high power gain is achieved at the expense of reduced ft. In this investigation a high fmax/ft ratio of 2.6 is obtained in combination with a ft * Lg product of 39 GHz μm, equivalent to an effective velocity of 2.45 * 107 cm/s. Despite a relaxed gate length of approximately 0.5 μm, these features were obtained at low drain bias of Vd = 1.5 V. © 1996 John Wiley & Sons, Inc.
