MemSor Devices

MemSor devices combine between the roles of traditional sensors and non-volatile memory devices, enabling the direct storage of an external stimulus intensity using a single device. MemSor devices are promising for applications requiring real-time analysis of sensors data, such as internet-of-things, augmented reality, robotics, among others. More information can be found in article number 2100528 by Nazek El-Atab.

Back-contacted indium gallium nitride (InGaN) quantum well LEDs can enable extremely large light emitters based on diffusion driven charge transport. The sharp electroluminescence peak at 439 nm from the multi-quantum well (MQW) stack demonstrates this. The back-contacted structure combines the best parts of thin-film and flip-chip LEDs.

The breakdown voltage (V _BR) of 1980V is obtained by fabricating the AlGaN/GaN Schottky barrier diodes (SBDs) with three recessed floating metal rings (RFMRs). Compared with the conventional-SBDs, recessed anode-SBDs and floating metal rings (FMR)-SBDs, the forward characteristics and reverse breakdown voltage are improved in RFMR-SBDs. The GaN SBDs with RFMRs showgreat improvement in V _BR.

Laser texturing technology assisted by green post-treatment (heat treatment) is introduced for stainless steel surfaces herein. In particular, a stable periodic dual-scale micro-/nanostructure on SUS 304 stainless steel surface is obtained by nanosecond laser micro-/nanotexturing. The measured steam condensation heat transfer coefficient of the textured steel surface after heat treatment is about 1.83 times that of the original sample.

Mid-IR LED and photodiode shares the same substrate used for their growth. LED output forms photocurrent which is quite sensitive to the presence of a material at the substrate surface. This enables the evanescent wave measurements of the material chemical composition using a very small chip.

The effect of point defects on piezoelectric field is investigated by similar-structure near-ultraviolet light-emitting diodes. It is found that the piezoelectric field, the radiative recombination rate, and the redshift in peak wavelength increase with the samples’ crystal quality compared with the reference sample. These optoelectronic characterizations reveal that the samples’ strain relaxation is caused by defects.

Herein, vortex domain wall (VDW) with anticlockwise chirality (AVDW) and clockwise vortex domain wall (CVDW) with tail-to-tail magnetization configuration is studied using micromagnetic simulation. The VDW dynamics and the pinning potential are investigated in a new proposed device with a stepped area of length (l) and depth (d), as shown in the figure.

A process of single rapid thermal diffusion in N₂ atmosphere with a Zn₃P₂/Zn/SiO₂ multilayer structure for preparation of a planar back-illuminated In_0.53Ga_0.47As/InP avalanche photodiode (APD) is proposed. Through optimization, a low dark current, high responsivity, fast transient response, and high reliability infrared APD is obtained, which demonstrates a simple method for the development of high-performance planar In_0.53Ga_0.47As/InP APD focal plane arrays.

To solve a series of problems of Cu–Sn–Ti fillers, Ga is added to the fillers to promote its mechanical properties and microstructure. Through the study of the reaction layer between diamond and fillers, it is found that Ga can increase the thickness of the interface reaction layer. The research results can promote the application of copper-based fillers in various industries.