p-InAsSbP/n-InAs Double Heterostructure as an On-Chip Midinfrared Evanescent Wave Sensor of Liquids
Abstract
I–V and L–I characteristics as well as photocurrent in monolithic p-InAsSbP/n-InAs double heterostructure (λ = 3.4 μm) with several mesas/individual diodes grown onto a single n+-InAs substrate have been measured at an activation of one of the diodes at ambient temperature in the presence of water, ethanol, and H20 + C2H5OH mixture at the n+-InAs substrate surface. Adequately sufficient photocurrent values, the evidence for the absorption of internally reflected infrared radiation at the n+-InAs substrate/liquid interface together with the correlation between the photocurrent and liquid chemical composition indicate the possibility of developing p-InAsSbP/n-InAs double heterostructures into a miniature monolithic “on-chip” evanescent wave sensor of different liquids.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Research data are not shared.
