Ovonic Threshold Switching

The modulation of ovonic threshold switching (OTS) characteristics is required in a cross-point array structure. Therefore, the effect of Zr doping on the amorphous Ga₂Te₃ having OTS characteristics is examined. Consequently, the thermal stability of the Zr-doped Ga₂Te₃ is improved and the threshold and holding voltages are increased with the increasing Zr doping concentration. More details can be found in article number 2000623 by Hyunchul Sohn and co-workers.

The effect of Zr doping on the amorphous Ga₂Te₃ is examined in this work. The optical and electrical properties and the thermal stability of Zr-doped Ga₂Te₃ thin films are analyzed. Consequently, the thermal stability of the Zr-doped Ga₂Te₃ thin film is improved, and the threshold and holding voltages are increased with the increasing Zr doping concentration.

Photoluminescence spectra is investigated in erbium-doped GaLaS(O) glass under 808 nm excitation. Herein, the visual impression and green coloration of photoluminescence (PL) are shown. The length of the cylinder is 10 mm and the diameter is close to 3 mm. The excitation laser beam passes along the axis of the cylinder and causes the intense up-conversion.

The types and their densities of the dislocations in heteroepitaxially and homoepitaxially grown AlN layers are investigated by the formation of etch pits by wet chemical etching. With this method, it is possible to accurately evaluate the dislocation density of high-quality AlN layers (dislocation density < 10⁴ cm⁻²), which is difficult to evaluate by conventional methods.

Latest investigation of laser interaction on passivated contact devices such as TOPCon, to form nickel/copper plated contacts, reveal interesting findings. With optimized wavelength and pulse duration, damage from laser is kept highly superficial and is reversible by thermal annealing process. This allows reducing the polysilicon thickness, thereby decreasing production costs and also enables an efficiency gain of 1% (absolute).

Zn₂SnO₄–SnO₂ composite thin films are prepared by radio frequency magnetron sputtering technique using the homemade Zn₂SnO₄–SnO₂ sputtering target. The film deposited with 150 W and annealed at 1000 °C exhibits an excellent sensing response of 1897 toward NH₃ gas at room-temperature working condition with a good response and recovery time.

The 6 wt% Bi-doped ZnO thin-film based over optical fiber sensor is reported. Thin-film over modified clad fiber keeping thickness within the 2–5 μm with an optimized penetration depth of 8.939 μm exhibit promising behavior towards ethylenediamine with sensitivity (%) 3.843, the response time (15 s), and recovery time (≈5 min).

Ba_0.67–xY_xSr_0.33Ti_0.995Mn_0.005O₃ (BSTM-xY, x = 0, 0.003, 0.006, and 0.012) ceramics are synthesized by citrate–nitrate combustion methods. The introduction of Y enhances the energy storage properties, dielectric properties, and leakage current density of BSTM-xY ceramics. The energy efficiency presents good thermal stability and electric field stability as Y doping.

Oxygenated cadmium selenide (CdSe:O) is prepared by the sputtering process. The incorporation of oxygen into the sputtering atmosphere promotes the formation of CdSeO₃ phase. When applied as the window layer, the CdSe:O can improve the performance of CdTe-based thin-film solar cell. Both open-circuit voltage (V_oc) and fill factor (FF) are improved due to the formation of CdSeO₃.

Herein, a structural fragment of PbO–B₂O₃–SeO₂:Nd₂O₃ glass network is illustrated. The Nd³⁺ coordination number is taken as 8 based on the band position of ⁴I_9/2→²P_1/2 transition in the absorption spectrum. The Se ions are shown in (SeO₃)²⁻ and (SeO₄)²⁻ structural units. BO₃, BO₄, and PbO₄ units are also shown in the fragment.

Measurements of subthreshold swing in a fully depleted silicon-on-insulator high-k dielectric-metal gate field-effect transistor (FET) at several temperatures (namely, in the range 120–400 K) allows determination of interface trap density distributions at the front and back gate interfaces. Combining results for N- and P-channel FET one can obtain the trap density distributions in almost the entire Si-channel bandgap.