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Original Papers
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Transformation of the angular-dependent form of X-ray diffraction into the photon-energy-dependent form for grazing incidence†
- Pages: 489-493
- First Published: 16 August 1988
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Lifetime and crystal order in annealed CZ silicon
- Pages: 503-508
- First Published: 16 August 1988
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A Kinetic investigation of cluster formation in semiconductors at elevated temperatures
- Pages: 519-528
- First Published: 16 August 1988
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A study of the diffusion of indium into TaS2 and TaSe2 in a scanning electron microscope
- Pages: 529-536
- First Published: 16 August 1988
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Thermal oxidation of ion implanted copper
- Pages: 537-543
- First Published: 16 August 1988
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Impurity clustering effects in magnesium-doped lithium fluoride
- Pages: 545-551
- First Published: 16 August 1988
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Internal friction due to kink motion and kink pair formation in intrinsic and n-doped germanium
- Pages: 553-568
- First Published: 16 August 1988
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On the origin of the macrocrystalline internal-friction peak (the bamboo boundary peak)
- Pages: 569-575
- First Published: 16 August 1988
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Precipitation and grain boundary internal friction peaks in AlMgSi
- Pages: 577-586
- First Published: 16 August 1988
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Elastic anomalies and martensite nucleation in β-phase alloys
- Pages: 587-598
- First Published: 16 August 1988
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Phase diagram, optical energy gap, and magnetic susceptibility of (CuIn)1−zMn2zSe2 alloys
- Pages: 599-606
- First Published: 16 August 1988
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High-temperature elastic behaviour of Mn-Mg mixed ferrites
- Pages: 607-611
- First Published: 16 August 1988
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Internal friction transitory effects associated with martensitic transformation in NiTi alloys
- Pages: 613-618
- First Published: 16 August 1988
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Simulation of residual photoconductivity at a metal–semiconductor contact
- Pages: 619-623
- First Published: 16 August 1988
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Thermally stimulated depolarization current controlled by surface charge change
- Pages: 625-630
- First Published: 16 August 1988
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Photoluminescence and EPR spectra of Fe-doped Ga1−xInxP epitaxial layers
- Pages: 631-636
- First Published: 16 August 1988
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Size effects in polycrystalline PbSe films obtained by chemical deposition
- Pages: 637-641
- First Published: 16 August 1988
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Influence of in on transport properties and phase transition in Pb1−xSnxTe thin films
- Pages: 643-650
- First Published: 16 August 1988
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Interference thickness oscillations of an X-ray wave on periodically profiled silicon†
- Pages: 651-655
- First Published: 16 August 1988
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On the mechanism of polarized electroluminescence from light-emitting structures based on GaN
- Pages: 657-667
- First Published: 16 August 1988
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Charged dislocations in semiconductors
- Pages: 669-681
- First Published: 16 August 1988
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On the improvement of the semiinsulating GaAs substrate homogeneity due to annealing
- Pages: 683-688
- First Published: 16 August 1988
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Thermal activation energies of undoped semi-insulating LEC GaAs. Correlation of TDH and TSC results
- Pages: 689-697
- First Published: 16 August 1988
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Investigations of the magnetic properties and demagnetization processes of an extremely high coercive Sm (Co, Cu, Fe, Zr)7.6 permanent magnet II. The coercivity mechanism†
- Pages: 705-719
- First Published: 16 August 1988
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Magnetic disaccommodation in ferrous Zinc ferrites
- Pages: 721-731
- First Published: 16 August 1988
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Temperature dependence of the g-tensor of N-methyl-N-ethyl morpholinium tetracyanoquinodimethoane
- Pages: 733-737
- First Published: 16 August 1988
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Effect of pressure on the symmetric hydrogen bond in (CCI3COO)2HK
- Pages: 739-745
- First Published: 16 August 1988
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Influence of neutron irradiation on the magnetic properties of FeNiCrMoSiB amorphous alloys
- Pages: 747-751
- First Published: 16 August 1988
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Thermoluminescence processes in CaF2: Ce, Mn
- Pages: 753-764
- First Published: 16 August 1988
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Polarisation phenomena in PbF2 superionic crystals
- Pages: 765-770
- First Published: 16 August 1988
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Electro-optical effect in KCl: Cd2+ and KCl:Sr2+
- Pages: 771-774
- First Published: 16 August 1988
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Optical energy gap and thermal diffusivity of GeSe semiconducting glasses
- Pages: 775-782
- First Published: 16 August 1988
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Some thermoluminescence properties of an α-Al2O3 sample. Sensitization effects†
- Pages: 783-794
- First Published: 16 August 1988
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Luminescence and site occupation of Cr3+ in sodium-β″-alumina
- Pages: 795-802
- First Published: 16 August 1988
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Analytical modelling of a MOSFET with non-uniform impurity profile
- Pages: 803-811
- First Published: 16 August 1988
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Calculation of the C–U profiles of graded heterojunctions
- Pages: 813-820
- First Published: 16 August 1988
Short Notes
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On the theory of X-ray diffraction by surface acoustic waves
- Pages: K85-K88
- First Published: 16 August 1988
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Short-range order in amorphous GeSe2
- Pages: K89-K92
- First Published: 16 August 1988
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Investigation of the amorphization process in GaAs and GaP by means of optical spectroscopy
- Pages: K93-K96
- First Published: 16 August 1988
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Optical absorption of quenched and γ-ray irradiated BaF2 single crystals later subjected to high electric fields or laser excitation
- Pages: K97-K100
- First Published: 16 August 1988
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Diffusion of implanted hydrogen in a silicon film under stress of a standing sound wave
- Pages: K101-K103
- First Published: 16 August 1988
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Modification of the electrical surface conductivity of lead-silicate glasses by H
ion bombardment
- Pages: K105-K107
- First Published: 16 August 1988
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Photoelectrochemical cells with p-type poly(3-methylthiophene)
- Pages: K109-K114
- First Published: 16 August 1988
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On a mechanism of photo-E.M.F. formation in SIS structures
- Pages: K115-K118
- First Published: 16 August 1988
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Effect of surface treatment on the photoanodic behaviour of thin film n-CdSe
- Pages: K119-K123
- First Published: 16 August 1988
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Photoconductivity in bulk and epitaxial GaAs: V
- Pages: K125-K130
- First Published: 16 August 1988
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Correlations between current-voltage characteristics and visible defect channels in thin SiO2 films after field stress
- Pages: K131-K133
- First Published: 16 August 1988
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On the nature of structural defects in SiO2 films visible with the aid of the liquid crystal technique
- Pages: K135-K137
- First Published: 16 August 1988
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ESR and IR studies on P-doped a-Si:H/a-Si:H junctions
- Pages: K139-K143
- First Published: 16 August 1988
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Luminescence characterization of K4Nb6O17 crystals
- Pages: K145-K149
- First Published: 16 August 1988
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Preparation and interband transitions of chemically deposited Fe2O3 coatings in the fundamental absorption region
- Pages: K151-K155
- First Published: 16 August 1988
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Photochromic properties of tungsten trioxide films made by electron beam deposition
- Pages: K157-K161
- First Published: 16 August 1988
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Reducing effects on the CL red emission of MgO doped crystals
- Pages: K163-K167
- First Published: 16 August 1988
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On the photoresponse of Cu-treated Cu2S/CdS thin film solar cells
- Pages: K169-K171
- First Published: 16 August 1988