Macroscopic characterizations are utilized to extract information on the defect level and crystallinity of the epitaxial layers in the light-emitting diodes (LEDs). It is demonstrated from examples that the decreases in ideality factor and S-parameter at low currents contain useful information on the defect level of the active region in the device.

Positron lifetime measurement combined with coincidence Doppler broadening spectroscopy is used for investigation of lattice defects in refractory metal high-entropy alloy HfNbTaTiZr. Herein, it is revealed that vacancies in the alloy are not distributed randomly but are associated with Hf atoms. A comparison of experimental data with theoretical estimations indicates considerable ion relaxation around vacancies.

Herein, NaV₆O₁₅ nanosheets are synthesized by one-step molten salt method as cathode materials for aqueous zinc-ion batteries (AZIBs), which exhibit long cycle stability and high capacity retention. The synthesis method of the molten salt and mechanism analysis of NaV₆O₁₅ nanosheets provide a new perspective and reference significance for the practical application of AZIBs.

The performance of thin-film solar cells prepared at low deposition temperatures is substantially improved upon postdeposition annealing. The annealing behavior of all functional layers of the device and the solar cells of various configurations is systematically studied by various advanced characterization methods combined with computer simulations.

Herein, a few examples inside the area of crystallographic defects, morphological defects, and chemical impurities on silicon wafers, reviewing the relevance of metrology aspects on the defect analysis approach inside a manufacturing environment, are proposed. The discussion also involves the final product certification data reporting, which tends to convey in a very synthetic format the whole measurement and material control process.

Herein, the development of an innovative orthogonal time-of-flight secondary-ion mass spectrometry implemented in focused ion beam (using a Ga source)/scanning electron microscope is reported. The capabilities of this instrument are demonstrated with the nanoscale characterization of Ni-based superalloys at very high resolution (<30 nm) and high mass resolution (4500 on ²⁸Si).

Herein, the precise characterization of the depth profile of thin films with a new methodology that combines X-ray reflectivity with X-ray fluorescence in grazing incidence is dealt with. It shows results of a reference-free approach on model samples.

A detailed analysis of time-resolved, grazing incidence X-ray absorption spectroscopy data provides access to the dynamics of structure formation during thin film growth by sputtering. For Cu thin films, nanometer-sized clusters appear during the first few seconds, coalescence is subsequently observed for about 5 s, and 3D growth of copper occurs for films of about 3 nm thickness and more.

Bias dependent photoluminescence (PL) is explored as a high sensitivity technique to characterize iron and copper contamination diffused in crystalline silicon. Herein, a strong increase in metallic contamination sensitivity with PL measurement by the minimization of surface recombination processes with enhanced field effect passivation using corona charges is shown.

Herein, a novel technique to monitor electro-physical characteristics of metal–insulator–semiconductor (MIS) devices and control their charge state is proposed. The suggested method is based on a JEDEC standard method, which is the current stress technique (J-Ramp). The proposed method gives the capability to predict the malfunction of MIS devices at an earlier stage in comparison with the J-Ramp.