In cooperation with SunDrive, Cu-plated SHJ solar cells, implementing the benefits of the optimized IMO and VHF PECVD nc-SiO_x:H films, were successfully developed with a certified significantly high PCE of 25.54% and a high J_sc of 40.24 mA/cm² for total area (274.5 cm²) SHJ solar cells being achieved.

The passivation quality of the p⁺ poly-Si passivating contacts with boron SOD was investigated. The factors influencing the passivation quality of p ${}^{+}$ poly-Si are crystallinity, indiffusion, and doping concentration. A 17.5% efficiency with 695 mV $V_{OC}$ was achieved by controlling the process parameters with optimization and simulation, reaching the highest reported cell efficiency with SOD p ${}^{+}$ poly-Si on saw-damage-etched flat surfaces.

This study analyzes the performance of the IEC 60891:2021 standard applied to I–V curves of faulty mc-Si PV modules under real-life conditions. Environmental factors, measurement season and irradiation level on the correction performance are studied. The results show that Procedure 2 performs better than Procedures 1 and 4.

In this paper we analyze the case of an 8-MW photovoltaic (PV) plant whose PV modules' backsheet suffered high degradation after 6 years of operation. The PV modules analyzed are from the same model and manufacturer but with different backsheet materials and different times of exposure.

In this study, a new algorithmic tool is introduced that creates a reference data set through the combination of data sets of the unshaded PV systems in the surrounding area. It subsequently compares the created reference data set with the one of the PV systems of interest, detects any energy loss and clusters the distinctive loss due to shadow, created by the surrounding objects. The algorithm is applied successfully to a number of different cases of shaded PV systems.

A route for the fabrication of CuGaSe₂-based solar cells on FTO-based back contacts is reported. The presence of an ultrathin interfacial Mo layer is found essential in improving device performance by not only creating a beneficial MoSe₂ hole transport interlayer but also improving the crystallization and Cu distribution homogeneity. Optical transmissions of the whole devices are in the 30% range. A champion cell efficiency of 5.4% is obtained in optimized conditions.

We investigated the temperature- and illumination-dependent performance of silicon heterojunction (SHJ) solar cells using a wide range of wafer resistivities (3–1000 Ω⋅cm). The efficiency of the cells fabricated using high-resistivity wafers is comparable to that of the reference cells at any given temperature. The findings demonstrate that there is no limitation in using high-resistivity wafers for SHJ solar cells under field operating conditions.

We highlight the significance that predictive modeling capabilities will have on improving future photovoltaic (PV) module reliability. We propose creating a unifying modeling framework that will enable the holistic assessment of PV module reliability, accelerate the PV reliability learning cycle, and bring us closer to quantitative service life predictions.