Volume 128, Issue 10 pp. 3520-3523
Zuschrift

Thiophene-S,S-dioxidized Indophenine: A Quinoid-Type Building Block with High Electron Affinity for Constructing n-Type Polymer Semiconductors with Narrow Band Gaps

Dr. Yunfeng Deng

Dr. Yunfeng Deng

Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West, Waterloo, Ontario, N2L 3G1 Canada

Search for more papers by this author
Bin Sun

Bin Sun

Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West, Waterloo, Ontario, N2L 3G1 Canada

Search for more papers by this author
Yinghui He

Yinghui He

Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West, Waterloo, Ontario, N2L 3G1 Canada

Search for more papers by this author
Jesse Quinn

Jesse Quinn

Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West, Waterloo, Ontario, N2L 3G1 Canada

Search for more papers by this author
Dr. Chang Guo

Dr. Chang Guo

Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West, Waterloo, Ontario, N2L 3G1 Canada

Search for more papers by this author
Prof. Dr. Yuning Li

Corresponding Author

Prof. Dr. Yuning Li

Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Ave West, Waterloo, Ontario, N2L 3G1 Canada

Search for more papers by this author
First published: 02 February 2016
Citations: 12

Abstract

Three thiophene-S,S-dioxidized indophenine (IDTO) isomers, 3 a (E,E,E), 3 b (Z,E,E), and 3 c (Z,E,Z), were synthesized by oxidation of an indophenine compound. 3 b and 3 c could be converted into the most-stable 3 a by heating at 110 °C. An IDTO-containing conjugated polymer, PIDTOTT, was prepared using 3 a as a comonomer through a Stille coupling reaction, and it possesses a narrow band gap and low energy levels. In organic field effect transistors (OFETs), PIDTOTT exhibited unipolar n-type semiconductor characteristics with unexpectedly high electron mobility (up to 0.14 cm2 V−1 s−1), despite its rather disordered chain packing.

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.