Hybrid Supercapacitors

In article number 2300210, Vinoth Kumar Ravi, Palanisamy Vickraman, and T. Arul Raja report on the MOF-based ZP@rGO and the mass effect of rGOx (x = 25, 50, 75, and 100 mg) @ MOFZP. XRD, Raman spectroscopy, SEM, and electrochemical studies identify MOFZP@rGO2 to be optimal. The full-cell device performance for this selective optimal doped rGO-MOFZP//rGO without binder is shown to have a specific capacitance of 130 F g⁻¹ @ 1 A g⁻¹ (power density 450 W kg⁻¹ @ 1 A g⁻¹; ED 58.4 Wh kg⁻¹ @ 1 A g⁻¹), which is suitable for supercapacitor applications.

Sample B with two parts graded Al composition multiple quantum wells (MQWs) in the active region has greater photoelectric performance than sample A. Sample B enhances carrier confinement ability, decreases the electric field made the energy band smoother, and increases the carrier concentration in the MQWs. This is all attributed to the new barrier structure designed.

Herein, multifunctional magnetic-luminescent nanoparticles are fabricated for bioimaging and magnetic hyperthermia treatment. High-resolution transmission electron microscopy images confirm the core/shell structure. In addition to exhibiting superparamagnetic behavior, they exhibit the emission. While the magnetic feature provides the possibility of directing the nanoparticles to the target region, the luminescence feature allows the verification of their presence in the target region.

Chemical solution deposition free of toxic and expensive solvents, coupled with annealing, enables high-quality PbI₂ films with the 2H and 4H polytypes.

Analysis of La₂CrMnO₆ mesoporous microspheres as electrode material focuses on improving charge storage performance. These microspheres exhibit a remarkable specific surface area, which provides enhanced ion diffusion, resulting in a high capacitance of 1416 F g⁻¹ at 1 A g⁻¹.

After adsorption, scanning electron microscopy shows that cracks appear on the surface of the material, which increases the specific surface area of the material. After 120 min, the absorption peak of the ultraviolet spectrum gradually disappears, and a series of experiments verify the mechanism of MB degradation.

Herein, WO₃ is utilized as electron transport layer, MoTe₂ as hole transport layer, and PbS-TBAI as the quantum dot absorber layer. SCAPS-1D is used to get the optimized performance parameters as fill factor 85.96%, open-circuit voltage 0.9237 V, short-circuit density 38.61 mA cm⁻², and power conversion efficiency 30.66%.

There are Al₂Cu, Al₆Mn, and Al₃Sc phases in the Al-Cu-Mn-Sc alloy. After T6 heat treatment, Al_0.968Sc_0.032 phase is produced in the alloy. The fracture forms of the alloy include transgranular fracture and intergranular fracture. T6 heat treatment can refine and homogenize the second phase, improve the strength and ductility of the alloy, and reduce its hardness.

Sol–gel method has been effectively used to prepare zinc oxide monocrystalline powders with varying aluminum (Al) concentrations (from 0 to 4 wt%). The impact of Al dopant on the structural, morphological, and optical properties of the synthesize samples is investigated.

Two structures of high electron mobility transistor devices are proposed in this paper, namely, inverted T-type gate and source–drain opposite side structure (ITGS–DOSS) and embedded ITGS–DOSS. Compared with the traditional T-type gate structure, these two structures exhibit better transfer, output, and radio frequency characteristics and can effectively suppress the current collapse effect.

MnNbS@PANI@AC composite-based hybrid supercapacitor is designed. A remarkable value of specific capacity of 1366 C g⁻¹ is obtained at the current density of 2 A g⁻¹. Outstanding energy density of 26.2 Wh kg⁻¹ and power density of 2072 W kg⁻¹ are conceived.

Benefiting from a large surface-to-volume ratio and phonon scattering suppressed on the nanostructure, InSb nanosheets (NSs) devices have high photosensitivity and low dark current density. An ultralow dark current room-temperature infrared (IR) photodetector based on InSb NSs/MoS₂ flakes van der Waals heterostructure is present, which has excellent detection performance. This study demonstrates the potential advantages of InSb NSs for room-temperature IR photodetection.

The as fabricated rGO dispersed Benzene 1, 4-dicarboxylic Acid @ Zinc Phosphate metal organic framework // rGO Hybrid Supercapacitor delivers the energy density of 58.4 Wh kg⁻¹ @ 1 A g⁻¹ in 3 m H₂SO₄ aqueous electrolyte within the potential window 0–1.8 V is reported for the first time.

The Li₆AlGd(BO₃)₄:xTb³⁺ phosphors fabricated through solid-state reaction process produce greenish-yellow luminescence of color purity 60% up to 70 °C. The optimized concentration for intense greenish-yellow luminescence is estimated as 2.0 mol%. These phosphors show proficiency as a suitable replacement of green component in producing high-yield white light.

Herein, a method is presented for fabricating a p-SnO_x/n-SnO_x diode on a flexible polyimide substrate, which involves a combination of sputtering and photolithography techniques. After 200 bending cycles at a curvature radius of 50 mm, the p-SnO_x/n-SnO_x diode retains its rectifying behavior, making it attractive for large-scale applications in transparent and flexible electronics.

This paper shows the switching comparison between High K-vertically diffused metal oxide semiconductor (HK-VDMOS) and stepped high K-vertically diffused metal oxide semiconductor (SHK-VDMOS). It has been suggested that Stepped doping increases transconductance and minimizes switching delay. Switching time is reduced by 30.58% when K = 5. The reduction is 31.76% and 40%, for K = 10 and K = 20, respectively.