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Review Article
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The l–h junction as an element of the semiconductor device
- Pages: 11-22
- First Published: 16 March 1984
Structure
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The dependence of scanning electron acoustic microscopy (SEAM) imaging on chopping and detection frequency for metal samples
- Pages: 23-33
- First Published: 16 March 1984
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Contrast investigations of surface acoustic waves by stroboscopic topography. I. Orientation contrast
- Pages: 35-45
- First Published: 16 March 1984
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Twist disclinations in thin SmC* liquid crystal
- Pages: 47-54
- First Published: 16 March 1984
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A complex high-temperature phase in Cu9Zr2
- Pages: 55-61
- First Published: 16 March 1984
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Kinetics of the amorphous-crystalline transition in the metallic glass Fe40Ni40B20
- Pages: 63-66
- First Published: 16 March 1984
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Phase transitions in ferroelastic RbIn(MoO4)2 crystals by electron paramagnetic resonance of Cr3+ ions
- Pages: 67-73
- First Published: 16 March 1984
Lattice Properties
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Method for obtaining the spectrum of plastic strains of mesoscopic volume elements in fatigued materials investigated by X-rays. I. plastic and elastic strains in fatigued material
- Pages: 75-84
- First Published: 16 March 1984
Defects, Atomistic Aspects
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On the stress dependence of the dislocation velocity in alkali halide crystals
- Pages: 85-91
- First Published: 16 March 1984
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The influence of Cu on dislocation motion in Si
- Pages: 93-99
- First Published: 16 March 1984
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Optical study of defects in quenched MgO crystals
- Pages: 111-117
- First Published: 16 March 1984
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The influence of silver and copper electrolysis on the radiation-induced optical absorption of natural quartz
- Pages: 119-124
- First Published: 16 March 1984
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The influence of foreigen atoms on the epitaxial annealing of ion-implanted silicon
- Pages: 125-133
- First Published: 16 March 1984
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Reduction of copper contamination in germanium on heat treatments above 700 °C
- Pages: 135-141
- First Published: 16 March 1984
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Positron annihilation studies on BeO powders
- Pages: 143-148
- First Published: 16 March 1984
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The annealing behaviour of arsenic-implanted silicon between 600 and 800°C characterized by carrier density profiles
- Pages: 149-155
- First Published: 16 March 1984
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Lateral diffusion of photodoped silver in amorphous Ge25 Se75 layers
- Pages: 157-161
- First Published: 16 March 1984
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Plastic deformation behavior of β-CuZn single crystals at low and high temperatures
- Pages: 163-170
- First Published: 16 March 1984
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Electrical activation and damage annealing of boron-implanted silicon by flash-lamp irradiation
- Pages: 171-177
- First Published: 16 March 1984
Magnetism
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High-sensitivity two-component measuring technique of inductances as applied to the investigation of magnetic after-effects
- Pages: 179-189
- First Published: 16 March 1984
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Magnetic Properties of RhMnSi and CoTiSi
- Pages: 195-200
- First Published: 16 March 1984
Localized Electronic States and Transitions
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Glow curves and the emission of flux grown BaFCl:Gd crystals
- Pages: 201-206
- First Published: 16 March 1984
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Photoconductivity and non-equilibrium carrier recombination in CdIn2S4 single crystals
- Pages: 207-212
- First Published: 16 March 1984
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The retrapping process in a thermoluminescence model with an intra-pair metastable state
- Pages: 213-219
- First Published: 16 March 1984
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Profile of trapped charge in silicon nitride films in MNOS structures
- Pages: 221-227
- First Published: 16 March 1984
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Pre-and post-irradiation deformation effects on thermoluminescence studies in barium-doped NaCl crystals
- Pages: 229-233
- First Published: 16 March 1984
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Nature of thermal donors in silicon crystals
- Pages: 235-242
- First Published: 16 March 1984
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Studies of low-energy optical absorption and gap state density of a-CdS by the constant photocurrent method
- Pages: 243-248
- First Published: 16 March 1984
Electric Transport
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Oscillatory dependence of the interference photomagnetoelectric effect and photoconductivity on magnetic field
- Pages: 249-256
- First Published: 16 March 1984
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Morphology, dopant concentration, and electrical properties of H2SO4- and BiCl3-doped polyacetylene films
- Pages: 257-263
- First Published: 16 March 1984
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Theory of C-U profiling of a nonuniformly doped semiconductor
- Pages: 265-274
- First Published: 16 March 1984
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Recombination current in abrupt semiconductor p-n junctions
- Pages: 275-284
- First Published: 16 March 1984
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A photoelectrochemical study of CuWO4 single crystals
- Pages: 285-294
- First Published: 16 March 1984
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Growth and physical properties of TlBiTe2 crystals
- Pages: 295-299
- First Published: 16 March 1984
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Crystal structure and electrical conductivity of [1,1′-bis(p-fluorophenyl)-4,4′-bipyridinium]2+(TCNQ)
and electrical characterisation of 51 TCNQ simple salts3)
- Pages: 301-306
- First Published: 16 March 1984
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Effect of light and magnetic field on double injection in semiconductor layers
- Pages: 307-317
- First Published: 16 March 1984
Device-Related Phenomena
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Ionization rates for electrons and holes in GaAsP
- Pages: 319-325
- First Published: 16 March 1984
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The surface degradation of the β″-Al2O3 solid electrolyte utilised in Na-S battery cells
- Pages: 327-334
- First Published: 16 March 1984
Structure
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Growth of single-crystalline regions on amorphous insulating substrates by zone-melting recrystallization
- Pages: K5-K9
- First Published: 16 March 1984
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Crystallisation behaviour and magnetic properties of Al2 O3 · Fe2 O3 · Mno · SiO2 glass
- Pages: K11-K15
- First Published: 16 March 1984
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Some considerations on the interfacial free energy between dislocation core and bulk material at high temperatures
- Pages: K17-K19
- First Published: 16 March 1984
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Influence of non-linear terms in the flux equation on the particle growth
- Pages: K21-K25
- First Published: 16 March 1984
Lattice Properties
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Thermal conductivity of pseudo-one-dimensional ferroelectric CsH2 PO4
- Pages: K27-K31
- First Published: 16 March 1984
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Effects of electric field on the II-III phase transition in lithium ammonium sulphate and its deuterated analogue
- Pages: K33-K36
- First Published: 16 March 1984
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Elastic behaviour of mixed manganese-magnesium ferrites at room temperature
- Pages: K37-K41
- First Published: 16 March 1984
Defects, Atomistic Aspects
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Room temperature effects of γ-rays on the dislocation damping coefficient in lif crystals
- Pages: K43-K47
- First Published: 16 March 1984
Magnetism
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On the thermal variation of spontaneous magnetization in ternary NiCuD (D = Zn, Al, or Si) alloys
- Pages: K49-K52
- First Published: 16 March 1984
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Magnetic properties of mixed chalcogenides of rare-earth elements and uranium
- Pages: K53-K56
- First Published: 16 March 1984
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Effect of particle size on Mössbauer parameters of α-Fe2e3
- Pages: K57-K61
- First Published: 16 March 1984
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The effect of thermal treatment on the magnetic anisotropy in amorphous Fe-B alloys
- Pages: K63-K66
- First Published: 16 March 1984
Localized Electronic States and Transitions
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Application of TSEE and TSD methods to investigations on trap levels - in Yb2O3 thin films deposited by electron beam evaporation
- Pages: K67-K70
- First Published: 16 March 1984
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Pyroelectroluminescence induced by tourmaline
- Pages: K71-K73
- First Published: 16 March 1984
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Photoluminescence of ternary layered crystals TlGaS2
- Pages: K75-K77
- First Published: 16 March 1984
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Thermally stimulated current in PbI, at low electric fields
- Pages: K79-K82
- First Published: 16 March 1984
Electric Transport
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Electron emission during frictional contact between metals and polymers
- Pages: K83-K86
- First Published: 16 March 1984
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Negative photoconductivity in selenium single crystals
- Pages: K87-K90
- First Published: 16 March 1984
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Potential distribution in anisotropic layers and hall plates with arbitrary geometries
- Pages: K91-K93
- First Published: 16 March 1984
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Properties of Al-doped bismuth silicon oxide
- Pages: K95-K99
- First Published: 16 March 1984
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Grain boundaries in germanium: Effects of exposure to plasmas
- Pages: K101-K105
- First Published: 16 March 1984
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Study of materials with uniaxial anisotrow using a dielectric resonator arrangement
- Pages: K107-K110
- First Published: 16 March 1984
Device-Related Phenomena
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Solar cells of schottky type with NiPb Pc interface
- Pages: K111-K115
- First Published: 16 March 1984