Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam Epitaxy

Heterointerface modification and epitaxial growth of 3C-SiC on Si by gas source molecular beam epitaxy (MBE) are surveyed. A Si surface was carbonized by the use of C₂H₂, thermal cracking of C₃H₈, and dimethylgermane (CH₃)₂GeH₂ (DMGe) to chemically convert the surface region into single crystalline 3C-SiC prior to crystal growth. It was found that a Si surface can be carbonized reproducibly by the use of hydrocarbon radicals at a temperature as low as 750 °C. The initial stage of carbonization is discussed based on the time-resolved reflection high-energy electron diffraction analysis. Low-temperature heterointerface modification by DMGe is described. As an advanced epitaxial growth, atomic-level control in SiC crystal growth by gas source MBE is given. Crystallinity and surface morphology of low-temperature 3C-SiC homoepitaxy on a carbonized layer is presented.