Volume 20, Issue 26 2304787
Research Article

Self-Assembly of Delta-Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism

Chinnadurai Muthu

Chinnadurai Muthu

Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019 India

Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002 India

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A. N. Resmi

A. N. Resmi

Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547 India

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Avija Ajayakumar

Avija Ajayakumar

Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019 India

Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002 India

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N. E. Aswathi Ravindran

N. E. Aswathi Ravindran

Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019 India

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G. Dayal

G. Dayal

Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547 India

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K. B. Jinesh

Corresponding Author

K. B. Jinesh

Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547 India

E-mail: [email protected]; [email protected]

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Konrad Szaciłowski

Konrad Szaciłowski

Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Mickiewicza 30, Krakow, 30 059 Poland

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Chakkooth Vijayakumar

Corresponding Author

Chakkooth Vijayakumar

Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019 India

Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002 India

E-mail: [email protected]; [email protected]

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First published: 20 January 2024
Citations: 5

Abstract

In the quest for advanced memristor technologies, this study introduces the synthesis of delta-formamidinium lead iodide (δ-FAPbI3) nanoparticles (NPs) and their self-assembly into nanorods (NRs). The formation of these NRs is facilitated by iodide vacancies, promoting the fusion of individual NPs at higher concentrations. Notably, these NRs exhibit robust stability under ambient conditions, a distinctive advantage attributed to the presence of capping ligands and a crystal lattice structured around face-sharing octahedra. When employed as the active layer in resistive random-access memory devices, these NRs demonstrate exceptional bipolar switching properties. A remarkable on/off ratio (105) is achieved, surpassing the performances of previously reported low-dimensional perovskite derivatives and α-FAPbI3 NP-based devices. This enhanced performance is attributed to the low off-state current owing to the reduced number of halide vacancies, intrinsic low dimensionality, and the parallel alignment of NRs on the FTO substrate. This study not only provides significant insights into the development of superior materials for memristor applications but also opens new avenues for exploring low-dimensional perovskite derivatives in advanced electronic devices.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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